JPS5286084A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS5286084A JPS5286084A JP206676A JP206676A JPS5286084A JP S5286084 A JPS5286084 A JP S5286084A JP 206676 A JP206676 A JP 206676A JP 206676 A JP206676 A JP 206676A JP S5286084 A JPS5286084 A JP S5286084A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- drain
- gate
- weaken
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To weaken the concentration of electric field between gate and drain and to improve the safety voltage of drain by using the same material to the semiconductive substrate as the material of gate electrode contacted to the gate insulating membrane and being it's impurity density to 4X1016∼1018 /cm3.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP206676A JPS5286084A (en) | 1976-01-12 | 1976-01-12 | Field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP206676A JPS5286084A (en) | 1976-01-12 | 1976-01-12 | Field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5286084A true JPS5286084A (en) | 1977-07-16 |
Family
ID=11518959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP206676A Pending JPS5286084A (en) | 1976-01-12 | 1976-01-12 | Field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5286084A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5612773A (en) * | 1979-07-12 | 1981-02-07 | Seiko Epson Corp | Silicon gate mos field-effect transistor |
JPS6057972A (en) * | 1983-09-09 | 1985-04-03 | Toshiba Corp | Insulated gate field effect transistor |
JPS62179768A (en) * | 1986-02-04 | 1987-08-06 | Nec Corp | Field effect transistor |
JPS62224962A (en) * | 1986-03-26 | 1987-10-02 | Mitsubishi Electric Corp | Semiconductor device |
JPH03293767A (en) * | 1990-10-19 | 1991-12-25 | Semiconductor Res Found | Semiconductor device |
JPH0496275A (en) * | 1990-08-03 | 1992-03-27 | Nkk Corp | Mos semiconductor device |
JPH09148564A (en) * | 1995-11-24 | 1997-06-06 | Nec Corp | Semiconductor device and its manufacture |
-
1976
- 1976-01-12 JP JP206676A patent/JPS5286084A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5612773A (en) * | 1979-07-12 | 1981-02-07 | Seiko Epson Corp | Silicon gate mos field-effect transistor |
JPS6331111B2 (en) * | 1979-07-12 | 1988-06-22 | Seiko Epson Corp | |
JPS6057972A (en) * | 1983-09-09 | 1985-04-03 | Toshiba Corp | Insulated gate field effect transistor |
JPH053147B2 (en) * | 1983-09-09 | 1993-01-14 | Tokyo Shibaura Electric Co | |
JPS62179768A (en) * | 1986-02-04 | 1987-08-06 | Nec Corp | Field effect transistor |
JPS62224962A (en) * | 1986-03-26 | 1987-10-02 | Mitsubishi Electric Corp | Semiconductor device |
JPH0496275A (en) * | 1990-08-03 | 1992-03-27 | Nkk Corp | Mos semiconductor device |
JPH03293767A (en) * | 1990-10-19 | 1991-12-25 | Semiconductor Res Found | Semiconductor device |
JPH09148564A (en) * | 1995-11-24 | 1997-06-06 | Nec Corp | Semiconductor device and its manufacture |
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