JPS5324285A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5324285A JPS5324285A JP9913776A JP9913776A JPS5324285A JP S5324285 A JPS5324285 A JP S5324285A JP 9913776 A JP9913776 A JP 9913776A JP 9913776 A JP9913776 A JP 9913776A JP S5324285 A JPS5324285 A JP S5324285A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- gates
- integration
- poly
- spacing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:A circuit device of a small element area and a high scale of integration is made by forming the gate regions of switching elements with poly-Si, performing uniform and high concentration diffusion down to the lower part and extremely accurately controlling the spacing between gates.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51099137A JPS6023503B2 (en) | 1976-08-18 | 1976-08-18 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51099137A JPS6023503B2 (en) | 1976-08-18 | 1976-08-18 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5324285A true JPS5324285A (en) | 1978-03-06 |
JPS6023503B2 JPS6023503B2 (en) | 1985-06-07 |
Family
ID=14239320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51099137A Expired JPS6023503B2 (en) | 1976-08-18 | 1976-08-18 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6023503B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5563432A (en) * | 1978-11-07 | 1980-05-13 | Nec Corp | Integrated circuit |
JPS55174478U (en) * | 1979-06-04 | 1980-12-15 |
-
1976
- 1976-08-18 JP JP51099137A patent/JPS6023503B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5563432A (en) * | 1978-11-07 | 1980-05-13 | Nec Corp | Integrated circuit |
JPS6211382B2 (en) * | 1978-11-07 | 1987-03-12 | Nippon Electric Co | |
JPS55174478U (en) * | 1979-06-04 | 1980-12-15 |
Also Published As
Publication number | Publication date |
---|---|
JPS6023503B2 (en) | 1985-06-07 |
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