JPS5320870A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS5320870A JPS5320870A JP9487976A JP9487976A JPS5320870A JP S5320870 A JPS5320870 A JP S5320870A JP 9487976 A JP9487976 A JP 9487976A JP 9487976 A JP9487976 A JP 9487976A JP S5320870 A JPS5320870 A JP S5320870A
- Authority
- JP
- Japan
- Prior art keywords
- memory device
- semiconductor memory
- layer
- type
- integration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Abstract
PURPOSE:The scale of integration is increased by forming a control electrode, an insulation layer, a P type layer and an N<+> layer in a vertical type in this order.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9487976A JPS5320870A (en) | 1976-08-11 | 1976-08-11 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9487976A JPS5320870A (en) | 1976-08-11 | 1976-08-11 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5320870A true JPS5320870A (en) | 1978-02-25 |
Family
ID=14122327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9487976A Pending JPS5320870A (en) | 1976-08-11 | 1976-08-11 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5320870A (en) |
-
1976
- 1976-08-11 JP JP9487976A patent/JPS5320870A/en active Pending
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