JPS5313321A - Semiconductor memory unit - Google Patents

Semiconductor memory unit

Info

Publication number
JPS5313321A
JPS5313321A JP8718976A JP8718976A JPS5313321A JP S5313321 A JPS5313321 A JP S5313321A JP 8718976 A JP8718976 A JP 8718976A JP 8718976 A JP8718976 A JP 8718976A JP S5313321 A JPS5313321 A JP S5313321A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory unit
gate electrode
silicon gate
matching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8718976A
Other languages
Japanese (ja)
Other versions
JPS5722227B2 (en
Inventor
Shigeharu Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8718976A priority Critical patent/JPS5313321A/en
Publication of JPS5313321A publication Critical patent/JPS5313321A/en
Publication of JPS5722227B2 publication Critical patent/JPS5722227B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

PURPOSE:The first silicon gate electrode andthe second silicon gate electrode are formed by self-matching, so that improvement of switching velocity and high integration of memory cell can be realized.
JP8718976A 1976-07-23 1976-07-23 Semiconductor memory unit Granted JPS5313321A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8718976A JPS5313321A (en) 1976-07-23 1976-07-23 Semiconductor memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8718976A JPS5313321A (en) 1976-07-23 1976-07-23 Semiconductor memory unit

Publications (2)

Publication Number Publication Date
JPS5313321A true JPS5313321A (en) 1978-02-06
JPS5722227B2 JPS5722227B2 (en) 1982-05-12

Family

ID=13908031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8718976A Granted JPS5313321A (en) 1976-07-23 1976-07-23 Semiconductor memory unit

Country Status (1)

Country Link
JP (1) JPS5313321A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5159281A (en) * 1974-11-20 1976-05-24 Mitsubishi Electric Corp Handotaisochino seizoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5159281A (en) * 1974-11-20 1976-05-24 Mitsubishi Electric Corp Handotaisochino seizoho

Also Published As

Publication number Publication date
JPS5722227B2 (en) 1982-05-12

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