JPS5159281A - Handotaisochino seizoho - Google Patents

Handotaisochino seizoho

Info

Publication number
JPS5159281A
JPS5159281A JP13385774A JP13385774A JPS5159281A JP S5159281 A JPS5159281 A JP S5159281A JP 13385774 A JP13385774 A JP 13385774A JP 13385774 A JP13385774 A JP 13385774A JP S5159281 A JPS5159281 A JP S5159281A
Authority
JP
Japan
Prior art keywords
handotaisochino
seizoho
handotaisochino seizoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13385774A
Other languages
Japanese (ja)
Other versions
JPS5647707B2 (en
Inventor
Tsutomu Yoshihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13385774A priority Critical patent/JPS5159281A/en
Publication of JPS5159281A publication Critical patent/JPS5159281A/en
Publication of JPS5647707B2 publication Critical patent/JPS5647707B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Non-Volatile Memory (AREA)
JP13385774A 1974-11-20 1974-11-20 Handotaisochino seizoho Granted JPS5159281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13385774A JPS5159281A (en) 1974-11-20 1974-11-20 Handotaisochino seizoho

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13385774A JPS5159281A (en) 1974-11-20 1974-11-20 Handotaisochino seizoho

Publications (2)

Publication Number Publication Date
JPS5159281A true JPS5159281A (en) 1976-05-24
JPS5647707B2 JPS5647707B2 (en) 1981-11-11

Family

ID=15114649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13385774A Granted JPS5159281A (en) 1974-11-20 1974-11-20 Handotaisochino seizoho

Country Status (1)

Country Link
JP (1) JPS5159281A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5313321A (en) * 1976-07-23 1978-02-06 Toshiba Corp Semiconductor memory unit
JPS5419372A (en) * 1977-07-14 1979-02-14 Nec Corp Production of semiconductor memory
JPS5488087A (en) * 1977-12-23 1979-07-12 Ibm Method of fabricating fet
JPS5550667A (en) * 1978-10-09 1980-04-12 Fujitsu Ltd Method of fabricating double gate mos-type integrated circuit
JPS5671978A (en) * 1979-11-16 1981-06-15 Hitachi Ltd Preparation method of semiconductor system
JPS56116671A (en) * 1980-02-20 1981-09-12 Toshiba Corp Semiconductor device
JPS56124272A (en) * 1980-03-05 1981-09-29 Toshiba Corp Manufacture of semiconductor device
JPS62257768A (en) * 1986-04-29 1987-11-10 エツセジ−エツセ　ミクロエレツトロニカ　ソチエタ　ペル　アノニマ Manufacture of eprom cell composed of oxide-nitride-oxide dielectric and eprom cell manufactured by the method

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5313321A (en) * 1976-07-23 1978-02-06 Toshiba Corp Semiconductor memory unit
JPS5722227B2 (en) * 1976-07-23 1982-05-12
JPS5419372A (en) * 1977-07-14 1979-02-14 Nec Corp Production of semiconductor memory
JPS6255710B2 (en) * 1977-07-14 1987-11-20 Nippon Electric Co
JPS5488087A (en) * 1977-12-23 1979-07-12 Ibm Method of fabricating fet
JPS5550667A (en) * 1978-10-09 1980-04-12 Fujitsu Ltd Method of fabricating double gate mos-type integrated circuit
JPS5671978A (en) * 1979-11-16 1981-06-15 Hitachi Ltd Preparation method of semiconductor system
JPS56116671A (en) * 1980-02-20 1981-09-12 Toshiba Corp Semiconductor device
JPS56124272A (en) * 1980-03-05 1981-09-29 Toshiba Corp Manufacture of semiconductor device
JPS62257768A (en) * 1986-04-29 1987-11-10 エツセジ−エツセ　ミクロエレツトロニカ　ソチエタ　ペル　アノニマ Manufacture of eprom cell composed of oxide-nitride-oxide dielectric and eprom cell manufactured by the method

Also Published As

Publication number Publication date
JPS5647707B2 (en) 1981-11-11

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