JPS52113181A - Mis type semiconductor device - Google Patents

Mis type semiconductor device

Info

Publication number
JPS52113181A
JPS52113181A JP2923976A JP2923976A JPS52113181A JP S52113181 A JPS52113181 A JP S52113181A JP 2923976 A JP2923976 A JP 2923976A JP 2923976 A JP2923976 A JP 2923976A JP S52113181 A JPS52113181 A JP S52113181A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
mis type
mis
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2923976A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Yoshimichi Hirobe
Yukio Tanigaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2923976A priority Critical patent/JPS52113181A/en
Publication of JPS52113181A publication Critical patent/JPS52113181A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To obtain a MIS type semiconductor device for memory by mounting an electrode to a window for forming a source zone through a Ti-based insulating film and providing a capacity element thereto.
JP2923976A 1976-03-19 1976-03-19 Mis type semiconductor device Pending JPS52113181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2923976A JPS52113181A (en) 1976-03-19 1976-03-19 Mis type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2923976A JPS52113181A (en) 1976-03-19 1976-03-19 Mis type semiconductor device

Publications (1)

Publication Number Publication Date
JPS52113181A true JPS52113181A (en) 1977-09-22

Family

ID=12270676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2923976A Pending JPS52113181A (en) 1976-03-19 1976-03-19 Mis type semiconductor device

Country Status (1)

Country Link
JP (1) JPS52113181A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0055558A2 (en) * 1980-12-29 1982-07-07 Fujitsu Limited Method of manufacturing a semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0055558A2 (en) * 1980-12-29 1982-07-07 Fujitsu Limited Method of manufacturing a semiconductor device
US4743953A (en) * 1980-12-29 1988-05-10 Fujitsu Limited Random access memory cell with MIS capacitor having insulator of oxide of doped metal

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