JPS51116685A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51116685A
JPS51116685A JP50040824A JP4082475A JPS51116685A JP S51116685 A JPS51116685 A JP S51116685A JP 50040824 A JP50040824 A JP 50040824A JP 4082475 A JP4082475 A JP 4082475A JP S51116685 A JPS51116685 A JP S51116685A
Authority
JP
Japan
Prior art keywords
semiconductor device
heighten
altering
depth
variable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50040824A
Other languages
Japanese (ja)
Inventor
Akisuke Mori
Kuniaki Makabe
Chikau Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50040824A priority Critical patent/JPS51116685A/en
Publication of JPS51116685A publication Critical patent/JPS51116685A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

Abstract

PURPOSE:To provide a lateral structure transistor in which the current utility factor is variable and to heighten the integration degree of a semiconductor integrated circuit, by altering the depth of an impurity diffusion area beneath an injection electrode.
JP50040824A 1975-04-05 1975-04-05 Semiconductor device Pending JPS51116685A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50040824A JPS51116685A (en) 1975-04-05 1975-04-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50040824A JPS51116685A (en) 1975-04-05 1975-04-05 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS51116685A true JPS51116685A (en) 1976-10-14

Family

ID=12591400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50040824A Pending JPS51116685A (en) 1975-04-05 1975-04-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS51116685A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0786817A1 (en) * 1996-01-26 1997-07-30 STMicroelectronics S.A. Side components in a power semi-conductor device
US6674148B1 (en) 1996-01-26 2004-01-06 Sgs-Thomson Microelectronics S.A. Lateral components in power semiconductor devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0786817A1 (en) * 1996-01-26 1997-07-30 STMicroelectronics S.A. Side components in a power semi-conductor device
FR2744287A1 (en) * 1996-01-26 1997-08-01 Sgs Thomson Microelectronics SIDE COMPONENTS IN A SEMICONDUCTOR POWER DEVICE
US5994171A (en) * 1996-01-26 1999-11-30 Sgs-Thomson Microelectronics S.A. Method of making lateral components in power semiconductor devices
US6674148B1 (en) 1996-01-26 2004-01-06 Sgs-Thomson Microelectronics S.A. Lateral components in power semiconductor devices

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