JPS5383480A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5383480A
JPS5383480A JP15995776A JP15995776A JPS5383480A JP S5383480 A JPS5383480 A JP S5383480A JP 15995776 A JP15995776 A JP 15995776A JP 15995776 A JP15995776 A JP 15995776A JP S5383480 A JPS5383480 A JP S5383480A
Authority
JP
Japan
Prior art keywords
semiconductor device
current
reverse
thyristor
supplying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15995776A
Other languages
Japanese (ja)
Inventor
Akira Kawakami
Tsutomu Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15995776A priority Critical patent/JPS5383480A/en
Publication of JPS5383480A publication Critical patent/JPS5383480A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Abstract

PURPOSE:To obtain a reverse conducting thyristor in which off-current is as small as about of OFF-current of a reverse conductivity type thyristor and yet supplying of reverse current is possible.
JP15995776A 1976-12-28 1976-12-28 Semiconductor device Pending JPS5383480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15995776A JPS5383480A (en) 1976-12-28 1976-12-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15995776A JPS5383480A (en) 1976-12-28 1976-12-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5383480A true JPS5383480A (en) 1978-07-22

Family

ID=15704855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15995776A Pending JPS5383480A (en) 1976-12-28 1976-12-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5383480A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6370456A (en) * 1986-09-11 1988-03-30 Fuji Electric Co Ltd Reverse conducting gate turn-off thristor
EP0621643A1 (en) * 1993-03-25 1994-10-26 Mitsubishi Denki Kabushiki Kaisha Reverse conducting gate turn-off thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6370456A (en) * 1986-09-11 1988-03-30 Fuji Electric Co Ltd Reverse conducting gate turn-off thristor
EP0621643A1 (en) * 1993-03-25 1994-10-26 Mitsubishi Denki Kabushiki Kaisha Reverse conducting gate turn-off thyristor

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