JPS533080A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS533080A
JPS533080A JP7639076A JP7639076A JPS533080A JP S533080 A JPS533080 A JP S533080A JP 7639076 A JP7639076 A JP 7639076A JP 7639076 A JP7639076 A JP 7639076A JP S533080 A JPS533080 A JP S533080A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
substrate
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7639076A
Other languages
Japanese (ja)
Other versions
JPS6130430B2 (en
Inventor
Kenji Kaneko
Takahiro Okabe
Tomoyuki Tobutsu
Yutaka Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7639076A priority Critical patent/JPS533080A/en
Publication of JPS533080A publication Critical patent/JPS533080A/en
Publication of JPS6130430B2 publication Critical patent/JPS6130430B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]

Abstract

PURPOSE:The operating speed of an I<2>L circuit is increased and its power consumption is reduced by partially burying an insulator into a substrate and opening holes in the substrate thereby providing conductivity to semiconductor portions and conductive substrate.
JP7639076A 1976-06-30 1976-06-30 Semiconductor integrated circuit device Granted JPS533080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7639076A JPS533080A (en) 1976-06-30 1976-06-30 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7639076A JPS533080A (en) 1976-06-30 1976-06-30 Semiconductor integrated circuit device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59007130A Division JPS59171156A (en) 1984-01-20 1984-01-20 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS533080A true JPS533080A (en) 1978-01-12
JPS6130430B2 JPS6130430B2 (en) 1986-07-14

Family

ID=13603987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7639076A Granted JPS533080A (en) 1976-06-30 1976-06-30 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS533080A (en)

Also Published As

Publication number Publication date
JPS6130430B2 (en) 1986-07-14

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