JPS51148387A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS51148387A JPS51148387A JP50072008A JP7200875A JPS51148387A JP S51148387 A JPS51148387 A JP S51148387A JP 50072008 A JP50072008 A JP 50072008A JP 7200875 A JP7200875 A JP 7200875A JP S51148387 A JPS51148387 A JP S51148387A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- become
- wel
- mis
- constitute
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Abstract
PURPOSE:To constitute so that the thyristor construction part in C-MIS might not become ON even when the voltage of the output terminal become lower than that of P<-> wel.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50072008A JPS596065B2 (en) | 1975-06-16 | 1975-06-16 | Hand tie souchi |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50072008A JPS596065B2 (en) | 1975-06-16 | 1975-06-16 | Hand tie souchi |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51148387A true JPS51148387A (en) | 1976-12-20 |
JPS596065B2 JPS596065B2 (en) | 1984-02-08 |
Family
ID=13476944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50072008A Expired JPS596065B2 (en) | 1975-06-16 | 1975-06-16 | Hand tie souchi |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS596065B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5211884A (en) * | 1975-07-18 | 1977-01-29 | Toshiba Corp | Semiconductor integrated circuit device |
JPS60154554A (en) * | 1984-01-24 | 1985-08-14 | Nec Corp | Complementary type insulated gate field effect semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5191681A (en) * | 1975-01-22 | 1976-08-11 |
-
1975
- 1975-06-16 JP JP50072008A patent/JPS596065B2/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5191681A (en) * | 1975-01-22 | 1976-08-11 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5211884A (en) * | 1975-07-18 | 1977-01-29 | Toshiba Corp | Semiconductor integrated circuit device |
JPS5823949B2 (en) * | 1975-07-18 | 1983-05-18 | 株式会社東芝 | Semiconductor integrated circuit device |
JPS60154554A (en) * | 1984-01-24 | 1985-08-14 | Nec Corp | Complementary type insulated gate field effect semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS596065B2 (en) | 1984-02-08 |
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