JPS5211884A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5211884A
JPS5211884A JP50087917A JP8791775A JPS5211884A JP S5211884 A JPS5211884 A JP S5211884A JP 50087917 A JP50087917 A JP 50087917A JP 8791775 A JP8791775 A JP 8791775A JP S5211884 A JPS5211884 A JP S5211884A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
circuit
shall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50087917A
Other languages
Japanese (ja)
Other versions
JPS5823949B2 (en
Inventor
Kazuo Sato
Mitsuhiko Ueno
Yasoji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50087917A priority Critical patent/JPS5823949B2/en
Priority to GB2976276A priority patent/GB1558606A/en
Publication of JPS5211884A publication Critical patent/JPS5211884A/en
Priority to US05/911,164 priority patent/US4209713A/en
Publication of JPS5823949B2 publication Critical patent/JPS5823949B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:The thyristor phenomenon due to the parasitic bipolar transistor in a complementary field-effect circuit (CMOS circuit) shall be prevented.
JP50087917A 1975-07-18 1975-07-18 Semiconductor integrated circuit device Expired JPS5823949B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50087917A JPS5823949B2 (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device
GB2976276A GB1558606A (en) 1975-07-18 1976-07-16 Semiconductor integrated circuit device
US05/911,164 US4209713A (en) 1975-07-18 1978-05-31 Semiconductor integrated circuit device in which difficulties caused by parasitic transistors are eliminated

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50087917A JPS5823949B2 (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5211884A true JPS5211884A (en) 1977-01-29
JPS5823949B2 JPS5823949B2 (en) 1983-05-18

Family

ID=13928262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50087917A Expired JPS5823949B2 (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5823949B2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830189A (en) * 1971-08-19 1973-04-20
JPS51146188A (en) * 1975-06-11 1976-12-15 Fujitsu Ltd Diode device
JPS51148387A (en) * 1975-06-16 1976-12-20 Fujitsu Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4830189A (en) * 1971-08-19 1973-04-20
JPS51146188A (en) * 1975-06-11 1976-12-15 Fujitsu Ltd Diode device
JPS51148387A (en) * 1975-06-16 1976-12-20 Fujitsu Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS5823949B2 (en) 1983-05-18

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