JPS5211878A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS5211878A JPS5211878A JP50087910A JP8791075A JPS5211878A JP S5211878 A JPS5211878 A JP S5211878A JP 50087910 A JP50087910 A JP 50087910A JP 8791075 A JP8791075 A JP 8791075A JP S5211878 A JPS5211878 A JP S5211878A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- semiconductor integrated
- circuit device
- cmos
- checked
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:The occurrence of a thyristor phenomenon generated due to the parasitic bipolar Tr in a complementary field-effect transistor (CMOS) shall be checked.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50087910A JPS5211878A (en) | 1975-07-18 | 1975-07-18 | Semiconductor integrated circuit device |
US05/908,661 US4168442A (en) | 1975-07-18 | 1978-05-23 | CMOS FET device with abnormal current flow prevention |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50087910A JPS5211878A (en) | 1975-07-18 | 1975-07-18 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5211878A true JPS5211878A (en) | 1977-01-29 |
JPS5422754B2 JPS5422754B2 (en) | 1979-08-08 |
Family
ID=13928060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50087910A Granted JPS5211878A (en) | 1975-07-18 | 1975-07-18 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5211878A (en) |
-
1975
- 1975-07-18 JP JP50087910A patent/JPS5211878A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5422754B2 (en) | 1979-08-08 |
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