JPS5211878A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5211878A
JPS5211878A JP50087910A JP8791075A JPS5211878A JP S5211878 A JPS5211878 A JP S5211878A JP 50087910 A JP50087910 A JP 50087910A JP 8791075 A JP8791075 A JP 8791075A JP S5211878 A JPS5211878 A JP S5211878A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
cmos
checked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50087910A
Other languages
Japanese (ja)
Other versions
JPS5422754B2 (en
Inventor
Kazuo Sato
Mitsuhiko Ueno
Yasoji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50087910A priority Critical patent/JPS5211878A/en
Publication of JPS5211878A publication Critical patent/JPS5211878A/en
Priority to US05/908,661 priority patent/US4168442A/en
Publication of JPS5422754B2 publication Critical patent/JPS5422754B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:The occurrence of a thyristor phenomenon generated due to the parasitic bipolar Tr in a complementary field-effect transistor (CMOS) shall be checked.
JP50087910A 1975-07-18 1975-07-18 Semiconductor integrated circuit device Granted JPS5211878A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP50087910A JPS5211878A (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device
US05/908,661 US4168442A (en) 1975-07-18 1978-05-23 CMOS FET device with abnormal current flow prevention

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50087910A JPS5211878A (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5211878A true JPS5211878A (en) 1977-01-29
JPS5422754B2 JPS5422754B2 (en) 1979-08-08

Family

ID=13928060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50087910A Granted JPS5211878A (en) 1975-07-18 1975-07-18 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5211878A (en)

Also Published As

Publication number Publication date
JPS5422754B2 (en) 1979-08-08

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