JPS51123573A - Semiconductor switching device - Google Patents

Semiconductor switching device

Info

Publication number
JPS51123573A
JPS51123573A JP4882275A JP4882275A JPS51123573A JP S51123573 A JPS51123573 A JP S51123573A JP 4882275 A JP4882275 A JP 4882275A JP 4882275 A JP4882275 A JP 4882275A JP S51123573 A JPS51123573 A JP S51123573A
Authority
JP
Japan
Prior art keywords
switching device
semiconductor switching
relatively high
withstand voltage
device designed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4882275A
Other languages
Japanese (ja)
Other versions
JPS5629387B2 (en
Inventor
Akira Kawakami
Hiroshi Gamo
Katsuhiro Oda
Yahei Takase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4882275A priority Critical patent/JPS51123573A/en
Publication of JPS51123573A publication Critical patent/JPS51123573A/en
Publication of JPS5629387B2 publication Critical patent/JPS5629387B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:Semiconductor switching device designed for relatively high withstand voltage, and which is provided with improved switching characteristics.
JP4882275A 1975-04-22 1975-04-22 Semiconductor switching device Granted JPS51123573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4882275A JPS51123573A (en) 1975-04-22 1975-04-22 Semiconductor switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4882275A JPS51123573A (en) 1975-04-22 1975-04-22 Semiconductor switching device

Publications (2)

Publication Number Publication Date
JPS51123573A true JPS51123573A (en) 1976-10-28
JPS5629387B2 JPS5629387B2 (en) 1981-07-08

Family

ID=12813903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4882275A Granted JPS51123573A (en) 1975-04-22 1975-04-22 Semiconductor switching device

Country Status (1)

Country Link
JP (1) JPS51123573A (en)

Also Published As

Publication number Publication date
JPS5629387B2 (en) 1981-07-08

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