JPS51123573A - Semiconductor switching device - Google Patents
Semiconductor switching deviceInfo
- Publication number
- JPS51123573A JPS51123573A JP4882275A JP4882275A JPS51123573A JP S51123573 A JPS51123573 A JP S51123573A JP 4882275 A JP4882275 A JP 4882275A JP 4882275 A JP4882275 A JP 4882275A JP S51123573 A JPS51123573 A JP S51123573A
- Authority
- JP
- Japan
- Prior art keywords
- switching device
- semiconductor switching
- relatively high
- withstand voltage
- device designed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:Semiconductor switching device designed for relatively high withstand voltage, and which is provided with improved switching characteristics.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4882275A JPS51123573A (en) | 1975-04-22 | 1975-04-22 | Semiconductor switching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4882275A JPS51123573A (en) | 1975-04-22 | 1975-04-22 | Semiconductor switching device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS51123573A true JPS51123573A (en) | 1976-10-28 |
JPS5629387B2 JPS5629387B2 (en) | 1981-07-08 |
Family
ID=12813903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4882275A Granted JPS51123573A (en) | 1975-04-22 | 1975-04-22 | Semiconductor switching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51123573A (en) |
-
1975
- 1975-04-22 JP JP4882275A patent/JPS51123573A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5629387B2 (en) | 1981-07-08 |
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