JPS5438782A - Production of integrated circuit device - Google Patents

Production of integrated circuit device

Info

Publication number
JPS5438782A
JPS5438782A JP10559877A JP10559877A JPS5438782A JP S5438782 A JPS5438782 A JP S5438782A JP 10559877 A JP10559877 A JP 10559877A JP 10559877 A JP10559877 A JP 10559877A JP S5438782 A JPS5438782 A JP S5438782A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
circuit device
state
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10559877A
Other languages
Japanese (ja)
Inventor
Kenji Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10559877A priority Critical patent/JPS5438782A/en
Publication of JPS5438782A publication Critical patent/JPS5438782A/en
Pending legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To reduce days of production by beforehand storing wafers in the state having been formed with up to electrode wirings and performing code assignment through ion implantation.
JP10559877A 1977-09-01 1977-09-01 Production of integrated circuit device Pending JPS5438782A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10559877A JPS5438782A (en) 1977-09-01 1977-09-01 Production of integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10559877A JPS5438782A (en) 1977-09-01 1977-09-01 Production of integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5438782A true JPS5438782A (en) 1979-03-23

Family

ID=14411922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10559877A Pending JPS5438782A (en) 1977-09-01 1977-09-01 Production of integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5438782A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650571A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Semiconductor device and manufacture thereof
JPS5693648A (en) * 1979-12-26 1981-07-29 Nisshin Steel Co Ltd Preventing method for oscillation of steel belt and device thereof
JPS56150860A (en) * 1980-04-24 1981-11-21 Fujitsu Ltd Manufacture of semiconductor memory device
JPS57145363A (en) * 1981-03-03 1982-09-08 Nec Corp Semiconductor device and preparation thereop
JPS5821369A (en) * 1981-07-30 1983-02-08 Toshiba Corp Fixed memory storage
JPS59127859A (en) * 1983-01-12 1984-07-23 Sanyo Electric Co Ltd Manufacture of rom semiconductor device
JPS59132651A (en) * 1983-01-20 1984-07-30 Sanyo Electric Co Ltd Data fixing method of semiconductor memory for reading only
JPS6042858A (en) * 1983-08-19 1985-03-07 Toshiba Corp Manufacture of semiconductor device
JPS6073259U (en) * 1983-10-26 1985-05-23 三洋電機株式会社 Dynamic ROM
JPS61186427A (en) * 1985-02-14 1986-08-20 Mitsubishi Heavy Ind Ltd Floating type strip passing device
JPS61273455A (en) * 1985-05-29 1986-12-03 Teijin Seiki Co Ltd Method and apparatus for processing thin band material
JPS61288464A (en) * 1985-06-14 1986-12-18 Ricoh Co Ltd Semiconductor memory device
US4743196A (en) * 1985-06-10 1988-05-10 Chugai Ro Co., Ltd. Continuous annealing furnace for a strip

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5650571A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Semiconductor device and manufacture thereof
JPS6212144B2 (en) * 1979-12-26 1987-03-17 Nitsushin Seiko Kk
JPS5693648A (en) * 1979-12-26 1981-07-29 Nisshin Steel Co Ltd Preventing method for oscillation of steel belt and device thereof
JPS56150860A (en) * 1980-04-24 1981-11-21 Fujitsu Ltd Manufacture of semiconductor memory device
JPS57145363A (en) * 1981-03-03 1982-09-08 Nec Corp Semiconductor device and preparation thereop
JPS5821369A (en) * 1981-07-30 1983-02-08 Toshiba Corp Fixed memory storage
JPS59127859A (en) * 1983-01-12 1984-07-23 Sanyo Electric Co Ltd Manufacture of rom semiconductor device
JPS59132651A (en) * 1983-01-20 1984-07-30 Sanyo Electric Co Ltd Data fixing method of semiconductor memory for reading only
JPS6042858A (en) * 1983-08-19 1985-03-07 Toshiba Corp Manufacture of semiconductor device
JPH051622B2 (en) * 1983-08-19 1993-01-08 Tokyo Shibaura Electric Co
JPS6073259U (en) * 1983-10-26 1985-05-23 三洋電機株式会社 Dynamic ROM
JPH0334922Y2 (en) * 1983-10-26 1991-07-24
JPS61186427A (en) * 1985-02-14 1986-08-20 Mitsubishi Heavy Ind Ltd Floating type strip passing device
JPS61273455A (en) * 1985-05-29 1986-12-03 Teijin Seiki Co Ltd Method and apparatus for processing thin band material
JPH0445425B2 (en) * 1985-05-29 1992-07-24 Teijin Seiki Co Ltd
US4743196A (en) * 1985-06-10 1988-05-10 Chugai Ro Co., Ltd. Continuous annealing furnace for a strip
JPS61288464A (en) * 1985-06-14 1986-12-18 Ricoh Co Ltd Semiconductor memory device

Similar Documents

Publication Publication Date Title
JPS5438782A (en) Production of integrated circuit device
JPS5360582A (en) Semiconductor ingegrated circuit device
JPS5214345A (en) Transistor sparking circuit
JPS5249767A (en) Semiconductor device
JPS5275987A (en) Gate protecting device
JPS5438764A (en) Semiconductor device
JPS52149481A (en) Semiconductor integrated circuit device and its production
JPS51134074A (en) Method to manufacture the semiconductor unit
JPS53143186A (en) Production of semiconductor device
JPS545635A (en) Semiconductor memory device
JPS51137455A (en) Electronic clock
JPS5296874A (en) Manufacture of electric charge coupling type semiconductor device
JPS52108858A (en) Electric timepiece
JPS5213761A (en) Flip-flop circuit
JPS5432084A (en) Semiconductor device
JPS53139963A (en) Flip flop circuit
JPS51116685A (en) Semiconductor device
JPS53110480A (en) Insulated gate type semiconductor device of complementary circuit
JPS5381023A (en) Memory device
JPS5344182A (en) Semiconductor device
JPS5380979A (en) Semiconductor device
JPS5220711A (en) Electronic exchange control system
JPS5357955A (en) Reset method for flip flop circuit
JPS5248364A (en) Electronic timepiece
JPS51123569A (en) Semiconductor manufacturing method

Legal Events

Date Code Title Description
A601 Written request for extension of time

Effective date: 20060815

Free format text: JAPANESE INTERMEDIATE CODE: A601

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20060818

A601 Written request for extension of time

Effective date: 20070514

Free format text: JAPANESE INTERMEDIATE CODE: A601

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20070521

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20070612

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20070615

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20070712

A602 Written permission of extension of time

Effective date: 20070718

Free format text: JAPANESE INTERMEDIATE CODE: A602

A521 Written amendment

Effective date: 20070813

Free format text: JAPANESE INTERMEDIATE CODE: A523

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20071025

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101102

Year of fee payment: 3

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111102

Year of fee payment: 4

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 5

Free format text: PAYMENT UNTIL: 20121102

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131102

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250