JPS6073259U - Dynamic ROM - Google Patents
Dynamic ROMInfo
- Publication number
- JPS6073259U JPS6073259U JP16628383U JP16628383U JPS6073259U JP S6073259 U JPS6073259 U JP S6073259U JP 16628383 U JP16628383 U JP 16628383U JP 16628383 U JP16628383 U JP 16628383U JP S6073259 U JPS6073259 U JP S6073259U
- Authority
- JP
- Japan
- Prior art keywords
- line
- mos transistor
- address
- dynamic
- address line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図はダイナミックROMの回路図、第2図は第1図
に示されたダイナミックROMを形成する半導体装置の
従来例を示す断面図、第3図は本考案の実施例を示す断
面図である。
主な図番の説明、2・・・・・・アドレスライン、5゜
8・・・・・・MOSトランジスタ、6・・・・・・出
力ライン、7・・・・・・電源ライン、10・・・・・
・線間容量、11,21・・・・・・寄生トランジスタ
、14・・・・・・ソース領域、15・・・・・・ドレ
イン領域、16・・・・・・酸化膜、17・・・・・・
半導体基体、“18・・・・・・P型頭域、19,20
・・・・・・N型領域。FIG. 1 is a circuit diagram of a dynamic ROM, FIG. 2 is a sectional view showing a conventional example of a semiconductor device forming the dynamic ROM shown in FIG. 1, and FIG. 3 is a sectional view showing an embodiment of the present invention. be. Explanation of main drawing numbers, 2...address line, 5゜8...MOS transistor, 6...output line, 7...power line, 10・・・・・・
・Line capacitance, 11, 21... Parasitic transistor, 14... Source region, 15... Drain region, 16... Oxide film, 17...・・・・・・
Semiconductor substrate, "18...P-type head area, 19,20
...N-type region.
Claims (1)
インと、該アドレスラインに接続されたプリチャージ用
のMOSトランジスタと、前記アドレスラインとマトリ
クスを構成する出力ラインと、前記アドレスラインと出
力ラインの任意の交点に設けられたデータを記憶するた
めのMOSトランジスタとを有するダイナミックROM
に於いて、前記プリチャージ用のMOSトランジスタが
形成される半導体領域と、前記出力ライン及び記憶用の
MOSトランジスタが形成される半導体領域とを分離し
て成るダイナミックROM0An address line selected by an address signal decoder, a precharging MOS transistor connected to the address line, an output line forming a matrix with the address line, and an arbitrary intersection between the address line and the output line. A dynamic ROM having a MOS transistor for storing data provided therein.
In the dynamic ROM0, a semiconductor region in which the precharge MOS transistor is formed and a semiconductor region in which the output line and storage MOS transistors are formed are separated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16628383U JPS6073259U (en) | 1983-10-26 | 1983-10-26 | Dynamic ROM |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16628383U JPS6073259U (en) | 1983-10-26 | 1983-10-26 | Dynamic ROM |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6073259U true JPS6073259U (en) | 1985-05-23 |
JPH0334922Y2 JPH0334922Y2 (en) | 1991-07-24 |
Family
ID=30364073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16628383U Granted JPS6073259U (en) | 1983-10-26 | 1983-10-26 | Dynamic ROM |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6073259U (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5438782A (en) * | 1977-09-01 | 1979-03-23 | Nec Corp | Production of integrated circuit device |
JPS54107278A (en) * | 1978-02-10 | 1979-08-22 | Hitachi Ltd | Semiconductor device |
JPS58116763A (en) * | 1982-12-24 | 1983-07-12 | Hitachi Ltd | Mos type rom |
-
1983
- 1983-10-26 JP JP16628383U patent/JPS6073259U/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5438782A (en) * | 1977-09-01 | 1979-03-23 | Nec Corp | Production of integrated circuit device |
JPS54107278A (en) * | 1978-02-10 | 1979-08-22 | Hitachi Ltd | Semiconductor device |
JPS58116763A (en) * | 1982-12-24 | 1983-07-12 | Hitachi Ltd | Mos type rom |
Also Published As
Publication number | Publication date |
---|---|
JPH0334922Y2 (en) | 1991-07-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS613599U (en) | semiconductor memory device | |
US4677589A (en) | Dynamic random access memory cell having a charge amplifier | |
JPS591199U (en) | semiconductor memory element | |
JPS6073259U (en) | Dynamic ROM | |
JP2650733B2 (en) | Semiconductor integrated circuit device | |
JPS5885362U (en) | semiconductor integrated device | |
JPS6197843U (en) | ||
JPS58165800U (en) | EPROM writing circuit | |
JPS60181054U (en) | semiconductor storage device | |
JPS59164254U (en) | Insulated gate field effect transistor | |
JPS58182442U (en) | Complementary insulated gate field effect semiconductor integrated circuit device | |
JPS60166158U (en) | memory cell | |
JPS62299U (en) | ||
JPS6142860U (en) | Complementary MOS semiconductor device | |
JPS6286000U (en) | ||
JPS5951392U (en) | display device | |
JPH0481300U (en) | ||
JPS61287162A (en) | Semiconductor memory device | |
JPS6122366U (en) | dynamic logic circuit | |
JPS62122358U (en) | ||
JPS63177054U (en) | ||
JPH01100459U (en) | ||
JPS60192531U (en) | Power element drive circuit | |
JPS6079754U (en) | Semiconductor integrated circuit device | |
JPH0394699U (en) |