JPS54107278A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54107278A
JPS54107278A JP1342778A JP1342778A JPS54107278A JP S54107278 A JPS54107278 A JP S54107278A JP 1342778 A JP1342778 A JP 1342778A JP 1342778 A JP1342778 A JP 1342778A JP S54107278 A JPS54107278 A JP S54107278A
Authority
JP
Japan
Prior art keywords
well
semiconductor device
peripheral circuit
type
vdd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1342778A
Other languages
Japanese (ja)
Other versions
JPS6325714B2 (en
Inventor
Osamu Minato
Toshiaki Masuhara
Toshio Sasaki
Seiji Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1342778A priority Critical patent/JPS54107278A/en
Priority to DE2904812A priority patent/DE2904812C2/en
Publication of JPS54107278A publication Critical patent/JPS54107278A/en
Publication of JPS6325714B2 publication Critical patent/JPS6325714B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a semiconductor device which can perform a stable memory operation.
CONSTITUTION: An channel MOS-FET which becomes a constituent of a peripheral circuit is formed in p-type well 2, and a memory cell is formed in peculiar well 2 which does not include the peripheral circuit. p-type layers 51 and 52 are formed in well 3 and are fixed at the earth potential or arbitrary potential VSS which has a polarity opposite to VDD.
COPYRIGHT: (C)1979,JPO&Japio
JP1342778A 1978-02-10 1978-02-10 Semiconductor device Granted JPS54107278A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1342778A JPS54107278A (en) 1978-02-10 1978-02-10 Semiconductor device
DE2904812A DE2904812C2 (en) 1978-02-10 1979-02-08 Semiconductor memory device in MOS technology

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1342778A JPS54107278A (en) 1978-02-10 1978-02-10 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54107278A true JPS54107278A (en) 1979-08-22
JPS6325714B2 JPS6325714B2 (en) 1988-05-26

Family

ID=11832832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1342778A Granted JPS54107278A (en) 1978-02-10 1978-02-10 Semiconductor device

Country Status (2)

Country Link
JP (1) JPS54107278A (en)
DE (1) DE2904812C2 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58125872A (en) * 1982-01-21 1983-07-27 Nec Corp Charge coupled device
JPS5922359A (en) * 1982-07-29 1984-02-04 Nec Corp Integrated semiconductor storage device
JPS6073259U (en) * 1983-10-26 1985-05-23 三洋電機株式会社 Dynamic ROM
JPS61214448A (en) * 1985-03-19 1986-09-24 Fujitsu Ltd Semiconductor integrated circuit
JPS6251251A (en) * 1985-08-30 1987-03-05 Toshiba Corp Static type random access memory
JPS6251252A (en) * 1985-08-30 1987-03-05 Toshiba Corp Random access memory
US4860255A (en) * 1981-05-13 1989-08-22 Hitachi, Ltd. Semiconductor memory
US4954866A (en) * 1987-09-24 1990-09-04 Hitachi, Ltd. Semiconductor integrated circuit memory
US5196910A (en) * 1987-04-24 1993-03-23 Hitachi, Ltd. Semiconductor memory device with recessed array region
JPH06260551A (en) * 1982-11-26 1994-09-16 Inmos Ltd Microcomputer
USRE38296E1 (en) * 1987-04-24 2003-11-04 Hitachi, Ltd. Semiconductor memory device with recessed array region

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442529A (en) * 1981-02-04 1984-04-10 At&T Bell Telephone Laboratories, Incorporated Power supply rejection characteristics of CMOS circuits
JPH0420550U (en) * 1990-06-11 1992-02-20

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3733591A (en) * 1970-06-24 1973-05-15 Westinghouse Electric Corp Non-volatile memory element

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4860255A (en) * 1981-05-13 1989-08-22 Hitachi, Ltd. Semiconductor memory
JPH0468789B2 (en) * 1982-01-21 1992-11-04 Nippon Electric Co
JPS58125872A (en) * 1982-01-21 1983-07-27 Nec Corp Charge coupled device
JPS5922359A (en) * 1982-07-29 1984-02-04 Nec Corp Integrated semiconductor storage device
JPH06260551A (en) * 1982-11-26 1994-09-16 Inmos Ltd Microcomputer
JPS6073259U (en) * 1983-10-26 1985-05-23 三洋電機株式会社 Dynamic ROM
JPH0334922Y2 (en) * 1983-10-26 1991-07-24
JPS61214448A (en) * 1985-03-19 1986-09-24 Fujitsu Ltd Semiconductor integrated circuit
JPS6251251A (en) * 1985-08-30 1987-03-05 Toshiba Corp Static type random access memory
JPS6251252A (en) * 1985-08-30 1987-03-05 Toshiba Corp Random access memory
US5196910A (en) * 1987-04-24 1993-03-23 Hitachi, Ltd. Semiconductor memory device with recessed array region
USRE38296E1 (en) * 1987-04-24 2003-11-04 Hitachi, Ltd. Semiconductor memory device with recessed array region
US4954866A (en) * 1987-09-24 1990-09-04 Hitachi, Ltd. Semiconductor integrated circuit memory

Also Published As

Publication number Publication date
DE2904812C2 (en) 1986-05-15
JPS6325714B2 (en) 1988-05-26
DE2904812A1 (en) 1979-08-16

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