JPS56150860A - Manufacture of semiconductor memory device - Google Patents
Manufacture of semiconductor memory deviceInfo
- Publication number
- JPS56150860A JPS56150860A JP5471580A JP5471580A JPS56150860A JP S56150860 A JPS56150860 A JP S56150860A JP 5471580 A JP5471580 A JP 5471580A JP 5471580 A JP5471580 A JP 5471580A JP S56150860 A JPS56150860 A JP S56150860A
- Authority
- JP
- Japan
- Prior art keywords
- forming
- mode
- type
- writing
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To shorten the step after writing informaton in a mask ROM by forming all the MISFETs forming memory cells in an equal mode and then introducing an impurity to the channel region of a desired element to convert its mode. CONSTITUTION:A gate film 3 is formed, for example, on the element forming region of a P type Si substrate 1, then ions are injected to form an N<-> type layer 4, and a polysilicon layer 5 is accumulated on the overall surface. Subsequently, the steps of etching and forming a gate electrode 5', forming N<+> type diffused layers for source and drain regions 6 and forming a protective oxidized film 7 are sequentially performed, and all the films are preserved in this stage (in which all the elements are in a D mode state). Then, a specific element (such as, for example, an element 8) is converted into an E mode on the basis of necessary information pattern. For that purpose, a resist pattern 9 is so formed as to allow the gate part of the element 8 to be opened, ions are injected to covert the channel region into a P<-> type layer 10 and to convert it into an E mode. Thereafter, the steps of forming electrodes and wires are performed. This can remarkably shorten the step after writing (converting the mode).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5471580A JPS56150860A (en) | 1980-04-24 | 1980-04-24 | Manufacture of semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5471580A JPS56150860A (en) | 1980-04-24 | 1980-04-24 | Manufacture of semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56150860A true JPS56150860A (en) | 1981-11-21 |
Family
ID=12978495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5471580A Pending JPS56150860A (en) | 1980-04-24 | 1980-04-24 | Manufacture of semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56150860A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6439763A (en) * | 1987-08-06 | 1989-02-10 | Sanyo Electric Co | Manufacture of semiconductor device |
JPS6446967A (en) * | 1987-08-17 | 1989-02-21 | Sanyo Electric Co | Manufacture of semiconductor device |
JPS6480069A (en) * | 1987-09-21 | 1989-03-24 | Hitachi Ltd | Semiconductor storage device and manufacture thereof |
EP0317136A2 (en) * | 1987-11-13 | 1989-05-24 | Hitachi, Ltd. | A method of producing a semiconductor integrated circuit device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5333076A (en) * | 1976-09-09 | 1978-03-28 | Toshiba Corp | Production of mos type integrated circuit |
JPS5375781A (en) * | 1976-12-14 | 1978-07-05 | Standard Microsyst Smc | Method of producing mos semiconductor circuit |
JPS5438782A (en) * | 1977-09-01 | 1979-03-23 | Nec Corp | Production of integrated circuit device |
JPS54130887A (en) * | 1978-03-20 | 1979-10-11 | Texas Instruments Inc | Method of fabricating rom and rom array |
JPS5553454A (en) * | 1978-10-16 | 1980-04-18 | Fujitsu Ltd | Method for producing semiconductor device |
-
1980
- 1980-04-24 JP JP5471580A patent/JPS56150860A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5333076A (en) * | 1976-09-09 | 1978-03-28 | Toshiba Corp | Production of mos type integrated circuit |
JPS5375781A (en) * | 1976-12-14 | 1978-07-05 | Standard Microsyst Smc | Method of producing mos semiconductor circuit |
JPS5438782A (en) * | 1977-09-01 | 1979-03-23 | Nec Corp | Production of integrated circuit device |
JPS54130887A (en) * | 1978-03-20 | 1979-10-11 | Texas Instruments Inc | Method of fabricating rom and rom array |
JPS5553454A (en) * | 1978-10-16 | 1980-04-18 | Fujitsu Ltd | Method for producing semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6439763A (en) * | 1987-08-06 | 1989-02-10 | Sanyo Electric Co | Manufacture of semiconductor device |
JPS6446967A (en) * | 1987-08-17 | 1989-02-21 | Sanyo Electric Co | Manufacture of semiconductor device |
JPS6480069A (en) * | 1987-09-21 | 1989-03-24 | Hitachi Ltd | Semiconductor storage device and manufacture thereof |
EP0317136A2 (en) * | 1987-11-13 | 1989-05-24 | Hitachi, Ltd. | A method of producing a semiconductor integrated circuit device |
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