JPS6480069A - Semiconductor storage device and manufacture thereof - Google Patents
Semiconductor storage device and manufacture thereofInfo
- Publication number
- JPS6480069A JPS6480069A JP23481787A JP23481787A JPS6480069A JP S6480069 A JPS6480069 A JP S6480069A JP 23481787 A JP23481787 A JP 23481787A JP 23481787 A JP23481787 A JP 23481787A JP S6480069 A JPS6480069 A JP S6480069A
- Authority
- JP
- Japan
- Prior art keywords
- type
- data
- write
- cells
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To cut down the time required for completion of a vertical ROM by a method wherein, after previously composing all memory cells in depletion type, selected cells are changed into enhancement type etc., to write data therein. CONSTITUTION:Overall surface of the active region of a semiconductor substrate 1 is channel-doped with n-type impurity to form N<->type layer 4 thus data 1 are written in all cells of a memorial array. Later, word lines W1-W3, source, drain region 5 comprising a gate electrode are formed to form a depletion type MISFET. Then, after forming an interlayer insulating film 6 and a data line 7, a channel part of memory cell to write the data 1 therein e.g. FETQ2 is doped with p type impurity to change the n-type of said impurity layer 4 into a p-type impurity layer 9. Through these procedures, after forming the data line 7 etc., the channel part can be composed in enhancement type or mild depletion type to write the data 1 therein so that the turnaround time required for the completion of ROM may be cut down.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23481787A JP2820152B2 (en) | 1987-09-21 | 1987-09-21 | Method for manufacturing semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23481787A JP2820152B2 (en) | 1987-09-21 | 1987-09-21 | Method for manufacturing semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6480069A true JPS6480069A (en) | 1989-03-24 |
JP2820152B2 JP2820152B2 (en) | 1998-11-05 |
Family
ID=16976849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23481787A Expired - Fee Related JP2820152B2 (en) | 1987-09-21 | 1987-09-21 | Method for manufacturing semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2820152B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0423358A (en) * | 1990-05-14 | 1992-01-27 | Matsushita Electron Corp | Manufacture of semiconductor device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56150860A (en) * | 1980-04-24 | 1981-11-21 | Fujitsu Ltd | Manufacture of semiconductor memory device |
JPS5856468A (en) * | 1981-09-30 | 1983-04-04 | Fujitsu Ltd | Manufacture of semiconductor |
JPS58111364A (en) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | Manufacture of read-only memory |
JPS6020562A (en) * | 1983-07-14 | 1985-02-01 | Toshiba Corp | Mos semiconductor device and manufacture thereof |
JPS6220367A (en) * | 1985-07-19 | 1987-01-28 | Hitachi Ltd | Semiconductor memory |
JPS6246556A (en) * | 1985-08-26 | 1987-02-28 | Hitachi Ltd | Semiconductor memory device |
-
1987
- 1987-09-21 JP JP23481787A patent/JP2820152B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56150860A (en) * | 1980-04-24 | 1981-11-21 | Fujitsu Ltd | Manufacture of semiconductor memory device |
JPS5856468A (en) * | 1981-09-30 | 1983-04-04 | Fujitsu Ltd | Manufacture of semiconductor |
JPS58111364A (en) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | Manufacture of read-only memory |
JPS6020562A (en) * | 1983-07-14 | 1985-02-01 | Toshiba Corp | Mos semiconductor device and manufacture thereof |
JPS6220367A (en) * | 1985-07-19 | 1987-01-28 | Hitachi Ltd | Semiconductor memory |
JPS6246556A (en) * | 1985-08-26 | 1987-02-28 | Hitachi Ltd | Semiconductor memory device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0423358A (en) * | 1990-05-14 | 1992-01-27 | Matsushita Electron Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JP2820152B2 (en) | 1998-11-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |