GB1516058A - Semiconductor storage cells - Google Patents

Semiconductor storage cells

Info

Publication number
GB1516058A
GB1516058A GB11928/77A GB1192877A GB1516058A GB 1516058 A GB1516058 A GB 1516058A GB 11928/77 A GB11928/77 A GB 11928/77A GB 1192877 A GB1192877 A GB 1192877A GB 1516058 A GB1516058 A GB 1516058A
Authority
GB
United Kingdom
Prior art keywords
transistor
electrode
atv
capacitor
buried region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB11928/77A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1516058A publication Critical patent/GB1516058A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate

Abstract

1516058 Semi-conductor memory cells SIEMENS AG 22 March 1977 [4 May 1976] 11928/77 Heading H1K A storage cell comprises a MOS selector transistor ATV formed in a V-shaped groove GR in an epitaxial layer E and connected to a storage capacitor CS, the groove extending into a buried region BU in a semi-conductor substrate SU. The transistor ATV is formed by a polysilicon word line WL which forms the gate electrode in the groove GR, a diffused region which acts as a bit line BL and one (S or D) electrode of the transistor ATV, and the buried region BU which forms the other (D or S) electrode of the transistor and also one electrode of the capacitor CS. The capacitor is formed by the PN junction capacitance between the buried region BU and the substrate SU.
GB11928/77A 1976-05-04 1977-03-22 Semiconductor storage cells Expired GB1516058A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762619664 DE2619664A1 (en) 1976-05-04 1976-05-04 SEMICONDUCTOR STORAGE CELL

Publications (1)

Publication Number Publication Date
GB1516058A true GB1516058A (en) 1978-06-28

Family

ID=5977038

Family Applications (1)

Application Number Title Priority Date Filing Date
GB11928/77A Expired GB1516058A (en) 1976-05-04 1977-03-22 Semiconductor storage cells

Country Status (4)

Country Link
DE (1) DE2619664A1 (en)
FR (1) FR2350665A1 (en)
GB (1) GB1516058A (en)
NL (1) NL7704863A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2642615C2 (en) 1976-09-22 1986-04-24 Siemens AG, 1000 Berlin und 8000 München Semiconductor memory

Also Published As

Publication number Publication date
NL7704863A (en) 1977-11-08
DE2619664A1 (en) 1977-11-10
FR2350665A1 (en) 1977-12-02

Similar Documents

Publication Publication Date Title
KR870006662A (en) Dynamic Random Access Memory with Home Capacity
KR860001058B1 (en) Semiconductor memory device
ATE222403T1 (en) DRAM MEMORY CELL HAVING A VERTICAL TRANSISTOR AND METHOD FOR PRODUCING THE SAME
JPS5723261A (en) Semiconductor memory
JPS6445160A (en) Semiconductor memory device and its manufacture
CA1270328C (en) Semiconductor memory device having stacked-capacitor type memory cells
GB1530094A (en) Semiconductor stores
GB1485138A (en) Field-effect transistors
EP0331911A3 (en) Charge amplifying trench memory cell
KR900004632B1 (en) Semiconductor memory device
JPS5718356A (en) Semiconductor memory storage
ATE129363T1 (en) SINGLE-TRANSISTOR MEMORY CELL ARRANGEMENT AND METHOD FOR PRODUCING THE SAME.
JPS5683060A (en) Semiconductor memory storage device
EP0066429A3 (en) Semiconductor memory
GB1502334A (en) Semiconductor data storage arrangements
GB1516058A (en) Semiconductor storage cells
KR880009439A (en) Recessed Storage Memory Cells
GB1530056A (en) Semiconductor data storage matrices
JPH01145850A (en) Semiconductor memory device
JPS5762556A (en) Semiconductor device
JPS6425461A (en) Semiconductor memory cell and manufacture thereof
JPS5667958A (en) Semiconductor memory system
JPS5536928A (en) Semiconductor dynamic memory element
JPS5667953A (en) Semiconductor system
JPS6480069A (en) Semiconductor storage device and manufacture thereof

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee