JPS5762556A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5762556A JPS5762556A JP55137464A JP13746480A JPS5762556A JP S5762556 A JPS5762556 A JP S5762556A JP 55137464 A JP55137464 A JP 55137464A JP 13746480 A JP13746480 A JP 13746480A JP S5762556 A JPS5762556 A JP S5762556A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- cell
- aluminum
- memory
- wires
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 5
- 229910052782 aluminium Inorganic materials 0.000 abstract 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To enable the transfer of data at high speed by employing aluminum wires for wording wires and bit wires in a 1-transistor/cell type MOS memory, minimizing the wire resistance, and performing the high speed operation of the memory. CONSTITUTION:1-transistor/cell type dynamic MOS memory cell has the first polysilicon layer 204 becoming one electrode of a cell capacity and the second polysilicon layer 206 forming the transfer gate of the cell. The til wire is formed of the first aluminum wire 208, and the word wire is formed of the second aluminum wire 210. This memory has a transistor section, a capacity section in a silicon gate structure. The bit wire can reduced in the parasitic capacity for the aluminum wire, and the data transfer of the detector can be performed at the high speed in high integration with stable operation. The word wire can also minimize the delay in reading due to the aluminum wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55137464A JPS5762556A (en) | 1980-10-01 | 1980-10-01 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55137464A JPS5762556A (en) | 1980-10-01 | 1980-10-01 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5762556A true JPS5762556A (en) | 1982-04-15 |
Family
ID=15199210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55137464A Pending JPS5762556A (en) | 1980-10-01 | 1980-10-01 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5762556A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61114551A (en) * | 1984-11-09 | 1986-06-02 | Toshiba Corp | Semiconductor integrated circuit device and pattern layout therefor |
| JPS62169471A (en) * | 1986-01-22 | 1987-07-25 | Hitachi Ltd | Semiconductor integrated circuit device |
-
1980
- 1980-10-01 JP JP55137464A patent/JPS5762556A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61114551A (en) * | 1984-11-09 | 1986-06-02 | Toshiba Corp | Semiconductor integrated circuit device and pattern layout therefor |
| JPS62169471A (en) * | 1986-01-22 | 1987-07-25 | Hitachi Ltd | Semiconductor integrated circuit device |
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