JPS6417462A - Read-only memory device - Google Patents

Read-only memory device

Info

Publication number
JPS6417462A
JPS6417462A JP17352887A JP17352887A JPS6417462A JP S6417462 A JPS6417462 A JP S6417462A JP 17352887 A JP17352887 A JP 17352887A JP 17352887 A JP17352887 A JP 17352887A JP S6417462 A JPS6417462 A JP S6417462A
Authority
JP
Japan
Prior art keywords
drain region
read
memory device
transistors
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17352887A
Other languages
Japanese (ja)
Inventor
Terumine Hirayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP17352887A priority Critical patent/JPS6417462A/en
Publication of JPS6417462A publication Critical patent/JPS6417462A/en
Pending legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To record information and to highly integrate a read-only memory device by interposing an insulating layer between the drain region and a bit line of a vertical MOS transistor. CONSTITUTION:A MOS transistor for forming a memory cell is formed of a source region 5 formed in the bottom of a groove 3, and a drain region 8 formed on the top of a columnar bump 2, and a channel is vertically formed on the side face of the bump 2. Transistors of respective columns are formed integrally with its gate electrodes made of polycrystalline silicon and electrically connected to become word lines. The transistors are connected or not connected at its drain region 8 to a bit line 1 in response to the content of information.
JP17352887A 1987-07-11 1987-07-11 Read-only memory device Pending JPS6417462A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17352887A JPS6417462A (en) 1987-07-11 1987-07-11 Read-only memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17352887A JPS6417462A (en) 1987-07-11 1987-07-11 Read-only memory device

Publications (1)

Publication Number Publication Date
JPS6417462A true JPS6417462A (en) 1989-01-20

Family

ID=15962196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17352887A Pending JPS6417462A (en) 1987-07-11 1987-07-11 Read-only memory device

Country Status (1)

Country Link
JP (1) JPS6417462A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02231763A (en) * 1989-03-06 1990-09-13 Matsushita Electron Corp Semiconductor device
JP2005303108A (en) * 2004-04-14 2005-10-27 Takehide Shirato Read only memory
KR101113905B1 (en) * 2008-05-02 2012-02-29 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 Solid-state image pickup element
US8664032B2 (en) 2007-12-26 2014-03-04 Unisantis Electronics Singapore Pte Ltd. Method of producing a solid-state image sensing device including solid-state image sensor having a pillar-shaped semiconductor layer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02231763A (en) * 1989-03-06 1990-09-13 Matsushita Electron Corp Semiconductor device
JP2005303108A (en) * 2004-04-14 2005-10-27 Takehide Shirato Read only memory
US8664032B2 (en) 2007-12-26 2014-03-04 Unisantis Electronics Singapore Pte Ltd. Method of producing a solid-state image sensing device including solid-state image sensor having a pillar-shaped semiconductor layer
KR101113905B1 (en) * 2008-05-02 2012-02-29 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 Solid-state image pickup element

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