JPS6417462A - Read-only memory device - Google Patents
Read-only memory deviceInfo
- Publication number
- JPS6417462A JPS6417462A JP17352887A JP17352887A JPS6417462A JP S6417462 A JPS6417462 A JP S6417462A JP 17352887 A JP17352887 A JP 17352887A JP 17352887 A JP17352887 A JP 17352887A JP S6417462 A JPS6417462 A JP S6417462A
- Authority
- JP
- Japan
- Prior art keywords
- drain region
- read
- memory device
- transistors
- bit line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To record information and to highly integrate a read-only memory device by interposing an insulating layer between the drain region and a bit line of a vertical MOS transistor. CONSTITUTION:A MOS transistor for forming a memory cell is formed of a source region 5 formed in the bottom of a groove 3, and a drain region 8 formed on the top of a columnar bump 2, and a channel is vertically formed on the side face of the bump 2. Transistors of respective columns are formed integrally with its gate electrodes made of polycrystalline silicon and electrically connected to become word lines. The transistors are connected or not connected at its drain region 8 to a bit line 1 in response to the content of information.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17352887A JPS6417462A (en) | 1987-07-11 | 1987-07-11 | Read-only memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17352887A JPS6417462A (en) | 1987-07-11 | 1987-07-11 | Read-only memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6417462A true JPS6417462A (en) | 1989-01-20 |
Family
ID=15962196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17352887A Pending JPS6417462A (en) | 1987-07-11 | 1987-07-11 | Read-only memory device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6417462A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02231763A (en) * | 1989-03-06 | 1990-09-13 | Matsushita Electron Corp | Semiconductor device |
JP2005303108A (en) * | 2004-04-14 | 2005-10-27 | Takehide Shirato | Read only memory |
KR101113905B1 (en) * | 2008-05-02 | 2012-02-29 | 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 | Solid-state image pickup element |
US8664032B2 (en) | 2007-12-26 | 2014-03-04 | Unisantis Electronics Singapore Pte Ltd. | Method of producing a solid-state image sensing device including solid-state image sensor having a pillar-shaped semiconductor layer |
-
1987
- 1987-07-11 JP JP17352887A patent/JPS6417462A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02231763A (en) * | 1989-03-06 | 1990-09-13 | Matsushita Electron Corp | Semiconductor device |
JP2005303108A (en) * | 2004-04-14 | 2005-10-27 | Takehide Shirato | Read only memory |
US8664032B2 (en) | 2007-12-26 | 2014-03-04 | Unisantis Electronics Singapore Pte Ltd. | Method of producing a solid-state image sensing device including solid-state image sensor having a pillar-shaped semiconductor layer |
KR101113905B1 (en) * | 2008-05-02 | 2012-02-29 | 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 | Solid-state image pickup element |
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