TW359817B - A non-volatile ferroelectric memory device with leakage preventing function - Google Patents

A non-volatile ferroelectric memory device with leakage preventing function

Info

Publication number
TW359817B
TW359817B TW084107975A TW84107975A TW359817B TW 359817 B TW359817 B TW 359817B TW 084107975 A TW084107975 A TW 084107975A TW 84107975 A TW84107975 A TW 84107975A TW 359817 B TW359817 B TW 359817B
Authority
TW
Taiwan
Prior art keywords
potential
transistor
section
bit lines
memory cells
Prior art date
Application number
TW084107975A
Other languages
Chinese (zh)
Inventor
Toru Kimura
Hironori Koike
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Application granted granted Critical
Publication of TW359817B publication Critical patent/TW359817B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

A non-volatile ferroelectric memory device includes a plurality of memory cells provided in a matrix manner, each of which comprises a transistor having a gate and source and drain regions formed in a semiconductor region, and a ferroelectric capacitor having first and second electrodes and a ferroelectric layer interposed between the first and second electrodes. The second electrode is connected to one of the source and drain regions of the transistor. The memory device further includes a plurality of pairs of bit lines, each of the bit lines of each of the pairs being connected to the other of the source and drain regions of the transistor of each memory cell in a column of the plurality of memory cells, a plurality of word lines each of which is connected to the gate of the transistor of each memory cell in a row of the plurality of memory cells, a plate potential section for generating a first predetermined potential intermediate between a reference potential and a high DC voltage and supplying the first potential to the first electrode of each of the plurality of memory cells, a well potential section fro generating a second predetermined potential lower than the first potential with respect to the reference potential and supplying the second potential to the semiconductor region of each of the plurality of transistors, and a sense amplifier section for sensing a data using potentials on the bit lines of each of the plurality of pairs of bit lines. The well potential section functions as a preventing section for preventing a leakage current from flowing from the ferroelectric layer.
TW084107975A 1994-08-12 1995-08-01 A non-volatile ferroelectric memory device with leakage preventing function TW359817B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19044894A JP2953316B2 (en) 1994-08-12 1994-08-12 Non-volatile ferroelectric memory

Publications (1)

Publication Number Publication Date
TW359817B true TW359817B (en) 1999-06-01

Family

ID=16258304

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084107975A TW359817B (en) 1994-08-12 1995-08-01 A non-volatile ferroelectric memory device with leakage preventing function

Country Status (4)

Country Link
US (1) US5615144A (en)
JP (1) JP2953316B2 (en)
KR (1) KR0172017B1 (en)
TW (1) TW359817B (en)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5798964A (en) * 1994-08-29 1998-08-25 Toshiba Corporation FRAM, FRAM card, and card system using the same
US5787044A (en) * 1995-10-23 1998-07-28 Micron Technology, Inc. Memory-cell array and a method for repairing the same
JP2937254B2 (en) * 1996-04-25 1999-08-23 日本電気株式会社 Repair method for ferroelectric memory
KR970076816A (en) * 1996-05-06 1997-12-12 김광호 Chipped ferroelectric random access memory using leakage current
JP2939973B2 (en) * 1996-06-06 1999-08-25 日本電気株式会社 Driving method of nonvolatile semiconductor memory device
JP3629099B2 (en) * 1996-06-28 2005-03-16 株式会社東芝 Semiconductor memory device
DE19631361A1 (en) * 1996-08-02 1998-02-05 Siemens Ag Process for the production of integrated capacitive structures
US6097624A (en) 1997-09-17 2000-08-01 Samsung Electronics Co., Ltd. Methods of operating ferroelectric memory devices having reconfigurable bit lines
KR100224673B1 (en) * 1996-12-13 1999-10-15 윤종용 Non-volatile ferroelectric memory device and driving method thereof
KR100297874B1 (en) 1997-09-08 2001-10-24 윤종용 Ferroelectric random access memory device
KR100247934B1 (en) 1997-10-07 2000-03-15 윤종용 Ferroelectric ram device and manufacturing method thereof
KR100275107B1 (en) * 1997-12-30 2000-12-15 김영환 A Ferroelectric Memory device and driving method thereof
US6370057B1 (en) 1999-02-24 2002-04-09 Kabushiki Kaisha Toshiba Semiconductor memory device having plate lines and precharge circuits
DE19854418C2 (en) 1998-11-25 2002-04-25 Infineon Technologies Ag Semiconductor component with at least one capacitor and method for its production
US6310797B1 (en) * 1998-12-02 2001-10-30 Seiko Epson Corporation Drive method for FeRAM memory cell and drive device for the memory cell
JP3604576B2 (en) 1999-02-19 2004-12-22 シャープ株式会社 Ferroelectric memory device
KR100296917B1 (en) 1999-06-28 2001-07-12 박종섭 Apparatus for generating reference voltage in ferroelectric memory device
JP2001076493A (en) * 1999-09-03 2001-03-23 Nec Corp Ferroelectric storage device
DE19948571A1 (en) 1999-10-08 2001-04-19 Infineon Technologies Ag Storage arrangement
JP2002016232A (en) * 2000-06-27 2002-01-18 Matsushita Electric Ind Co Ltd Semiconductor memory and method of driving the same
JP2002016233A (en) * 2000-06-27 2002-01-18 Matsushita Electric Ind Co Ltd Semiconductor memory and method of driving the same
US6515889B1 (en) * 2000-08-31 2003-02-04 Micron Technology, Inc. Junction-isolated depletion mode ferroelectric memory
US6466473B2 (en) * 2001-03-30 2002-10-15 Intel Corporation Method and apparatus for increasing signal to sneak ratio in polarizable cross-point matrix memory arrays
JP3776857B2 (en) 2001-10-16 2006-05-17 株式会社東芝 Semiconductor integrated circuit device
US6661695B2 (en) 2002-05-01 2003-12-09 Ramtron International Corporation Capacitance sensing technique for ferroelectric random access memory arrays
KR100831799B1 (en) * 2004-04-08 2008-05-28 가부시끼가이샤 르네사스 테크놀로지 Semiconductor storage
US7372726B2 (en) * 2004-04-08 2008-05-13 Renesas Technology Corp. Semiconductor memory
US7209394B1 (en) * 2005-09-08 2007-04-24 Advanced Micro Devices, Inc. Memory structure for providing decreased leakage and bipolar current sensitivity
US10083973B1 (en) * 2017-08-09 2018-09-25 Micron Technology, Inc. Apparatuses and methods for reading memory cells
US10529410B2 (en) 2017-12-18 2020-01-07 Micron Technology, Inc. Techniques for accessing an array of memory cells to reduce parasitic coupling
US10762944B2 (en) * 2017-12-18 2020-09-01 Micron Technology, Inc. Single plate configuration and memory array operation
US11081157B2 (en) * 2018-12-11 2021-08-03 Micron Technology, Inc. Leakage compensation for memory arrays
US11017831B2 (en) 2019-07-15 2021-05-25 Micron Technology, Inc. Ferroelectric memory cell access

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888630A (en) * 1988-03-21 1989-12-19 Texas Instruments Incorporated Floating-gate transistor with a non-linear intergate dielectric
JPH088339B2 (en) * 1988-10-19 1996-01-29 株式会社東芝 Semiconductor memory
JPH02110865A (en) * 1988-10-19 1990-04-24 Mitsubishi Electric Corp Digital recording and reproducing device
US5303182A (en) * 1991-11-08 1994-04-12 Rohm Co., Ltd. Nonvolatile semiconductor memory utilizing a ferroelectric film
JP2930168B2 (en) * 1992-10-09 1999-08-03 シャープ株式会社 Driving method of ferroelectric memory device
JP3191549B2 (en) * 1994-02-15 2001-07-23 松下電器産業株式会社 Semiconductor memory device

Also Published As

Publication number Publication date
JPH0855484A (en) 1996-02-27
US5615144A (en) 1997-03-25
KR960008831A (en) 1996-03-22
JP2953316B2 (en) 1999-09-27
KR0172017B1 (en) 1999-03-30

Similar Documents

Publication Publication Date Title
TW359817B (en) A non-volatile ferroelectric memory device with leakage preventing function
KR970067772A (en) Semiconductor memory
EP1782427B1 (en) Integrated dram-nvram multi-level memory
US5694355A (en) Memory cell and wordline driver for embedded DRAM in ASIC process
US5134581A (en) Highly stable semiconductor memory with a small memory cell area
US20080205114A1 (en) Semiconductor memory device and method of operating same
KR950002049A (en) Semiconductor memory
KR880002181A (en) Semiconductor memory
KR960030240A (en) Ferroelectric random access memory
KR980006291A (en) Ferroelectric memory
KR900015164A (en) EEPROM with NAND Memory Cell Structure
US4878199A (en) Semiconductor memory device
KR870009396A (en) Nonvolatile Semiconductor Memory
KR940026952A (en) Semiconductor memory device
GB1456114A (en) Memory matrix
KR930022561A (en) Semiconductor memory
US4161791A (en) Automatic refresh memory cell
US4120047A (en) Quasi-static MOS memory array with standby operation
ES8202651A1 (en) Integrated semiconductor memory matrix using one-FET cells.
US4247919A (en) Low power quasi-static storage cell
US6438042B1 (en) Arrangement of bitline boosting capacitor in semiconductor memory device
JP2509764B2 (en) Dynamic memory cell and dynamic memory
US3781831A (en) Read only memory utilizing floating gate transistors and method of programming
EP0139428B1 (en) High-density semiconductor memory device
EP0496360A2 (en) Semiconductor memory cell