JPS54128678A - Forming method of insulation film - Google Patents
Forming method of insulation filmInfo
- Publication number
- JPS54128678A JPS54128678A JP3610278A JP3610278A JPS54128678A JP S54128678 A JPS54128678 A JP S54128678A JP 3610278 A JP3610278 A JP 3610278A JP 3610278 A JP3610278 A JP 3610278A JP S54128678 A JPS54128678 A JP S54128678A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- dielectric strength
- poly
- oxidation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To increase the dielectric strength of the insulation film, by eliminating the oxide film and performing reprocessing, after the processing of polycrystal Si added with impurity or amorphous substance under oxidatiin atmosphere at more than 1000°C for 30 minutes or more.
CONSTITUTION: Afrer increasing the conductivity by laminating the poly Si 15 and making phosphorus diffusion on the oxide film 14 of the N type Si substrate 13, it is processed at l000°C or more under oxidation atmosphere for 30 minutes or more, forming the oxide film 16. Further, the film 16 is etched and the insulation film 18 is formed with similar treatment, selectively forming the conductive poly Si 17. The formation of the film 18 is more effective with higher temperature of 1000°C or more and it closes to the dielectric strength of the oxide film on the single crystal Si. For example, at the oxidation temperature of 1150°C, the crystalization between particles is advanced on the surface of the poly Si and the grain size is extremely greater, and the unevenness of the surface is eliminated with oxidation and it becomes a factor to the improvement of the dielectric strength.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3610278A JPS54128678A (en) | 1978-03-30 | 1978-03-30 | Forming method of insulation film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3610278A JPS54128678A (en) | 1978-03-30 | 1978-03-30 | Forming method of insulation film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54128678A true JPS54128678A (en) | 1979-10-05 |
JPS5729842B2 JPS5729842B2 (en) | 1982-06-25 |
Family
ID=12460395
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3610278A Granted JPS54128678A (en) | 1978-03-30 | 1978-03-30 | Forming method of insulation film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54128678A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5676537A (en) * | 1979-11-27 | 1981-06-24 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6372129A (en) * | 1986-09-12 | 1988-04-01 | Katsuhiro Yokota | Protective film for iii-v compound semiconductor |
-
1978
- 1978-03-30 JP JP3610278A patent/JPS54128678A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5676537A (en) * | 1979-11-27 | 1981-06-24 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6211781B2 (en) * | 1979-11-27 | 1987-03-14 | Fujitsu Ltd | |
JPS6372129A (en) * | 1986-09-12 | 1988-04-01 | Katsuhiro Yokota | Protective film for iii-v compound semiconductor |
Also Published As
Publication number | Publication date |
---|---|
JPS5729842B2 (en) | 1982-06-25 |
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