JPS54128678A - Forming method of insulation film - Google Patents

Forming method of insulation film

Info

Publication number
JPS54128678A
JPS54128678A JP3610278A JP3610278A JPS54128678A JP S54128678 A JPS54128678 A JP S54128678A JP 3610278 A JP3610278 A JP 3610278A JP 3610278 A JP3610278 A JP 3610278A JP S54128678 A JPS54128678 A JP S54128678A
Authority
JP
Japan
Prior art keywords
film
oxide film
dielectric strength
poly
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3610278A
Other languages
Japanese (ja)
Other versions
JPS5729842B2 (en
Inventor
Haruo Okano
Nozomi Harada
Nobuhisa Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3610278A priority Critical patent/JPS54128678A/en
Publication of JPS54128678A publication Critical patent/JPS54128678A/en
Publication of JPS5729842B2 publication Critical patent/JPS5729842B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To increase the dielectric strength of the insulation film, by eliminating the oxide film and performing reprocessing, after the processing of polycrystal Si added with impurity or amorphous substance under oxidatiin atmosphere at more than 1000°C for 30 minutes or more.
CONSTITUTION: Afrer increasing the conductivity by laminating the poly Si 15 and making phosphorus diffusion on the oxide film 14 of the N type Si substrate 13, it is processed at l000°C or more under oxidation atmosphere for 30 minutes or more, forming the oxide film 16. Further, the film 16 is etched and the insulation film 18 is formed with similar treatment, selectively forming the conductive poly Si 17. The formation of the film 18 is more effective with higher temperature of 1000°C or more and it closes to the dielectric strength of the oxide film on the single crystal Si. For example, at the oxidation temperature of 1150°C, the crystalization between particles is advanced on the surface of the poly Si and the grain size is extremely greater, and the unevenness of the surface is eliminated with oxidation and it becomes a factor to the improvement of the dielectric strength.
COPYRIGHT: (C)1979,JPO&Japio
JP3610278A 1978-03-30 1978-03-30 Forming method of insulation film Granted JPS54128678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3610278A JPS54128678A (en) 1978-03-30 1978-03-30 Forming method of insulation film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3610278A JPS54128678A (en) 1978-03-30 1978-03-30 Forming method of insulation film

Publications (2)

Publication Number Publication Date
JPS54128678A true JPS54128678A (en) 1979-10-05
JPS5729842B2 JPS5729842B2 (en) 1982-06-25

Family

ID=12460395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3610278A Granted JPS54128678A (en) 1978-03-30 1978-03-30 Forming method of insulation film

Country Status (1)

Country Link
JP (1) JPS54128678A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676537A (en) * 1979-11-27 1981-06-24 Fujitsu Ltd Manufacture of semiconductor device
JPS6372129A (en) * 1986-09-12 1988-04-01 Katsuhiro Yokota Protective film for iii-v compound semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676537A (en) * 1979-11-27 1981-06-24 Fujitsu Ltd Manufacture of semiconductor device
JPS6211781B2 (en) * 1979-11-27 1987-03-14 Fujitsu Ltd
JPS6372129A (en) * 1986-09-12 1988-04-01 Katsuhiro Yokota Protective film for iii-v compound semiconductor

Also Published As

Publication number Publication date
JPS5729842B2 (en) 1982-06-25

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