JPS5513952A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS5513952A JPS5513952A JP8729278A JP8729278A JPS5513952A JP S5513952 A JPS5513952 A JP S5513952A JP 8729278 A JP8729278 A JP 8729278A JP 8729278 A JP8729278 A JP 8729278A JP S5513952 A JPS5513952 A JP S5513952A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- sio
- oxidizing
- admixture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To obtain a MOS type semiconductor device that has a high withstand voltage by treating the surface of a substrate with an admixture of phosphoric acid and fluoric acid, prior to covering a gate oxidizing film over an area of the semiconductor substrate being surrounded by a field oxidizing film.
CONSTITUTION: A laminate consisting of a SiO2 film 22 and a Si3N4 film 23, both of which have required shapes, is provided on the center section of a Si substrate 21. Then it is heat treated in an oxidizing atmosphere, thus forming a thick filed SiO2 film 24 around the laminate. After that, the film 22 and 23 are removed so that the surface of the substrate 21 is exposed, to where a thin gate SiO2 film 25 is formed. But prior to this operation, the surface of the substrate 21 is pretreated by an admixture of phosphoric acid and fluoric acid, then heat treated in an oxidizing atmosphere to make the film 25 grow. Then the conventional processes follow: forming a gate electrode 26 on the film 25; providing source-drain regions 27 and 28 at the both ends of the film 25 in the substrate; covering the entire surface with a SiO2 film 29; and making openings to where electrodes 30 and 31 are installed. With this constitution, a withstant voltage of 9 to 10 MV/cm can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8729278A JPS5513952A (en) | 1978-07-18 | 1978-07-18 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8729278A JPS5513952A (en) | 1978-07-18 | 1978-07-18 | Manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5513952A true JPS5513952A (en) | 1980-01-31 |
Family
ID=13910724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8729278A Pending JPS5513952A (en) | 1978-07-18 | 1978-07-18 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5513952A (en) |
-
1978
- 1978-07-18 JP JP8729278A patent/JPS5513952A/en active Pending
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