JPS57167669A - Capacitor and manufacture thereof - Google Patents

Capacitor and manufacture thereof

Info

Publication number
JPS57167669A
JPS57167669A JP56045138A JP4513881A JPS57167669A JP S57167669 A JPS57167669 A JP S57167669A JP 56045138 A JP56045138 A JP 56045138A JP 4513881 A JP4513881 A JP 4513881A JP S57167669 A JPS57167669 A JP S57167669A
Authority
JP
Japan
Prior art keywords
capacitor
silicon
leakage current
crystal grain
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56045138A
Other languages
Japanese (ja)
Other versions
JPS6262472B2 (en
Inventor
Takashi Kato
Masao Taguchi
Nobuo Toyokura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56045138A priority Critical patent/JPS57167669A/en
Publication of JPS57167669A publication Critical patent/JPS57167669A/en
Publication of JPS6262472B2 publication Critical patent/JPS6262472B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body

Abstract

PURPOSE:To reduce the leakage current for the subject capacitor by a method wherein the silicon which has been moved to a crystal grain boundary by thermal diffusion is oxidized and formed into an insulated material of silicon dioxide. CONSTITUTION:After an amorphous tantalum oxide layer 17 has been formed contacting to polycrystalline silicon layer and the like, the layer 17 is maintained in an oxidized atmosphee of a high temperature which is higher than the crystallizing temperature of amorphous tantalum, the tantalum oxide layer 17 is crystallized, at the same time, silicon is diffused on the crystal grain field which will be generated following the crystallization, silicon dioxide 19 is filled up on the crystal grain boundary by performing oxidation, and the conductive passage of the leakage current is blocked. As a result, the capacitor which withstands a high-temperature treatment of 1,000 deg.C or thereabouts at which the manufacturing method which is considered to be suitable for the semiconductor integrated circuit and having volumetric density exceeding the standard for the capacitor to be used for a thin film integrated circuit wherein the same kind of metal oxide is used as a delivative and also having the leakage current which is comparable with the above, can be manufactured.
JP56045138A 1981-03-27 1981-03-27 Capacitor and manufacture thereof Granted JPS57167669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56045138A JPS57167669A (en) 1981-03-27 1981-03-27 Capacitor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56045138A JPS57167669A (en) 1981-03-27 1981-03-27 Capacitor and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57167669A true JPS57167669A (en) 1982-10-15
JPS6262472B2 JPS6262472B2 (en) 1987-12-26

Family

ID=12710915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56045138A Granted JPS57167669A (en) 1981-03-27 1981-03-27 Capacitor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57167669A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107854A (en) * 1983-11-16 1985-06-13 Hitachi Ltd Capacitor
JPS6471166A (en) * 1987-09-10 1989-03-16 Sharp Kk Manufacture of tantalum oxide thin film
JPH08279601A (en) * 1996-02-14 1996-10-22 Hitachi Ltd Manufacture of semiconductor device
WO1999025014A1 (en) * 1997-11-10 1999-05-20 Hitachi, Ltd. Dielectric element and manufacturing method therefor
US6410400B1 (en) * 1999-11-09 2002-06-25 Hyundai Electronics Industries Co., Ltd. Method of manufacturing Ta2O5capacitor using Ta2O5thin film as dielectric layer
US7531405B2 (en) 2005-02-28 2009-05-12 Qimonds Ag Method of manufacturing a dielectric layer and corresponding semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60107854A (en) * 1983-11-16 1985-06-13 Hitachi Ltd Capacitor
JPS6471166A (en) * 1987-09-10 1989-03-16 Sharp Kk Manufacture of tantalum oxide thin film
JPH08279601A (en) * 1996-02-14 1996-10-22 Hitachi Ltd Manufacture of semiconductor device
WO1999025014A1 (en) * 1997-11-10 1999-05-20 Hitachi, Ltd. Dielectric element and manufacturing method therefor
US6410400B1 (en) * 1999-11-09 2002-06-25 Hyundai Electronics Industries Co., Ltd. Method of manufacturing Ta2O5capacitor using Ta2O5thin film as dielectric layer
US7531405B2 (en) 2005-02-28 2009-05-12 Qimonds Ag Method of manufacturing a dielectric layer and corresponding semiconductor device

Also Published As

Publication number Publication date
JPS6262472B2 (en) 1987-12-26

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