JPS6471166A - Manufacture of tantalum oxide thin film - Google Patents

Manufacture of tantalum oxide thin film

Info

Publication number
JPS6471166A
JPS6471166A JP62228872A JP22887287A JPS6471166A JP S6471166 A JPS6471166 A JP S6471166A JP 62228872 A JP62228872 A JP 62228872A JP 22887287 A JP22887287 A JP 22887287A JP S6471166 A JPS6471166 A JP S6471166A
Authority
JP
Japan
Prior art keywords
thin film
tantalum
tantalum oxide
manufacture
oxide thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62228872A
Other languages
Japanese (ja)
Other versions
JPH0656877B2 (en
Inventor
Koji Yamagishi
Hisakazu Miyatake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62228872A priority Critical patent/JPH0656877B2/en
Publication of JPS6471166A publication Critical patent/JPS6471166A/en
Publication of JPH0656877B2 publication Critical patent/JPH0656877B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To assure a high dielectric thin film having excellent insulating properties by doping the thin film with a group IV element in the periodic table after formation of the same by ion implantation. CONSTITUTION:A metal thin film 7 is deposited on a Si substrate 1 through a contact hole so as to extend to a peripheral insulating film 6. The thin film 7 is patterned into the configurations of electrodes and the like using a conventional photolithography process, on which tantalum oxide 8 is formed by a CVD technique. The formed tantalum is ion-implanted with Ti and Si. This yields the tantalum oxide 8 involving the group IV elements in the tantalum, assuring the tantalum 8 having excellent insulating properties.
JP62228872A 1987-09-10 1987-09-10 Method for producing tantalum oxide thin film Expired - Fee Related JPH0656877B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62228872A JPH0656877B2 (en) 1987-09-10 1987-09-10 Method for producing tantalum oxide thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62228872A JPH0656877B2 (en) 1987-09-10 1987-09-10 Method for producing tantalum oxide thin film

Publications (2)

Publication Number Publication Date
JPS6471166A true JPS6471166A (en) 1989-03-16
JPH0656877B2 JPH0656877B2 (en) 1994-07-27

Family

ID=16883190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62228872A Expired - Fee Related JPH0656877B2 (en) 1987-09-10 1987-09-10 Method for producing tantalum oxide thin film

Country Status (1)

Country Link
JP (1) JPH0656877B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01225148A (en) * 1988-03-04 1989-09-08 Toshiba Corp Thin film of dielectric and manufacture thereof
JPH04359557A (en) * 1991-06-06 1992-12-11 Nec Corp Method of manufacturing semiconductor device
US5320972A (en) * 1993-01-07 1994-06-14 Northern Telecom Limited Method of forming a bipolar transistor
JP2001223346A (en) * 1999-12-22 2001-08-17 Hynix Semiconductor Inc Method pf manufacturing capacitors of semiconductor elements
WO2002063668A1 (en) * 2001-02-06 2002-08-15 Matsushita Electric Industrial Co., Ltd. Method of forming insulating film and method of producing semiconductor device
JP2008252118A (en) 1998-03-12 2008-10-16 Lucent Technol Inc Electronic component with doped metal oxide dielectric material, and process for manufacturing electronic component with doped metal oxide dielectric material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147177A (en) * 1975-06-12 1976-12-17 Fujitsu Ltd A treatment method of tantaum oxide
JPS57167669A (en) * 1981-03-27 1982-10-15 Fujitsu Ltd Capacitor and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147177A (en) * 1975-06-12 1976-12-17 Fujitsu Ltd A treatment method of tantaum oxide
JPS57167669A (en) * 1981-03-27 1982-10-15 Fujitsu Ltd Capacitor and manufacture thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01225148A (en) * 1988-03-04 1989-09-08 Toshiba Corp Thin film of dielectric and manufacture thereof
JPH04359557A (en) * 1991-06-06 1992-12-11 Nec Corp Method of manufacturing semiconductor device
US5320972A (en) * 1993-01-07 1994-06-14 Northern Telecom Limited Method of forming a bipolar transistor
JP2008252118A (en) 1998-03-12 2008-10-16 Lucent Technol Inc Electronic component with doped metal oxide dielectric material, and process for manufacturing electronic component with doped metal oxide dielectric material
JP2001223346A (en) * 1999-12-22 2001-08-17 Hynix Semiconductor Inc Method pf manufacturing capacitors of semiconductor elements
WO2002063668A1 (en) * 2001-02-06 2002-08-15 Matsushita Electric Industrial Co., Ltd. Method of forming insulating film and method of producing semiconductor device
JP2002314074A (en) * 2001-02-06 2002-10-25 Matsushita Electric Ind Co Ltd Method for forming insulation film and method for manufacturing semiconductor device
US6734069B2 (en) 2001-02-06 2004-05-11 Matsushita Electric Industrial Co., Ltd. Method of forming a high dielectric constant insulating film and method of producing semiconductor device using the same

Also Published As

Publication number Publication date
JPH0656877B2 (en) 1994-07-27

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees