JPS6422054A - Manufacture of capacitor of semiconductor device - Google Patents

Manufacture of capacitor of semiconductor device

Info

Publication number
JPS6422054A
JPS6422054A JP17961087A JP17961087A JPS6422054A JP S6422054 A JPS6422054 A JP S6422054A JP 17961087 A JP17961087 A JP 17961087A JP 17961087 A JP17961087 A JP 17961087A JP S6422054 A JPS6422054 A JP S6422054A
Authority
JP
Japan
Prior art keywords
capacitor
electrode
polysilicon film
film
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17961087A
Other languages
Japanese (ja)
Inventor
Hiroki Fukui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17961087A priority Critical patent/JPS6422054A/en
Publication of JPS6422054A publication Critical patent/JPS6422054A/en
Pending legal-status Critical Current

Links

Landscapes

  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To make it difficult to be affected by the parasitic capacitance by forming both electrodes of a capacitor of the same film of the gate electrode of an MOS element or the emitter electrode of a bipolar element, respectively. CONSTITUTION:One polysilicon film 8 of a capacitor section 17 consists of a polysilicon film 8 constituting the gate electrode of an MOS element 18, an insulating film 10 of the capacitor section 17 is consists of an insulating film 10 of a bipolar element 19, and the counter electrode (polysilicon film 11) of the capacitor section 17 consists of a polysilicon film 11 constituting the emitter electrode of the bipolar element 19. Accordingly, since each electrode of the capacitor is formed along with a different layer from the diffusion layer of the MOS element, a capacitor having a small parasitic capacitance can be obtained.
JP17961087A 1987-07-17 1987-07-17 Manufacture of capacitor of semiconductor device Pending JPS6422054A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17961087A JPS6422054A (en) 1987-07-17 1987-07-17 Manufacture of capacitor of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17961087A JPS6422054A (en) 1987-07-17 1987-07-17 Manufacture of capacitor of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6422054A true JPS6422054A (en) 1989-01-25

Family

ID=16068760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17961087A Pending JPS6422054A (en) 1987-07-17 1987-07-17 Manufacture of capacitor of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6422054A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0330431A (en) * 1989-06-28 1991-02-08 Fujitsu Ltd Bipolar semiconductor device and manufacture thereof
JPH09193121A (en) * 1996-01-12 1997-07-29 Shinei Kiko Kk Pressure roll molding machine
US5736776A (en) * 1994-03-01 1998-04-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US6204104B1 (en) 1997-11-21 2001-03-20 Nec Corporation Semiconductor device and manufacturing method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0330431A (en) * 1989-06-28 1991-02-08 Fujitsu Ltd Bipolar semiconductor device and manufacture thereof
US5736776A (en) * 1994-03-01 1998-04-07 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US6096619A (en) * 1994-03-01 2000-08-01 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing a semiconductor device comprising a capacitor with an intrinsic polysilicon electrode
JPH09193121A (en) * 1996-01-12 1997-07-29 Shinei Kiko Kk Pressure roll molding machine
US6204104B1 (en) 1997-11-21 2001-03-20 Nec Corporation Semiconductor device and manufacturing method thereof
US6307227B2 (en) 1997-11-21 2001-10-23 Nec Corporation Semiconductor device and manufacturing method thereof

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