JPS6422054A - Manufacture of capacitor of semiconductor device - Google Patents
Manufacture of capacitor of semiconductor deviceInfo
- Publication number
- JPS6422054A JPS6422054A JP17961087A JP17961087A JPS6422054A JP S6422054 A JPS6422054 A JP S6422054A JP 17961087 A JP17961087 A JP 17961087A JP 17961087 A JP17961087 A JP 17961087A JP S6422054 A JPS6422054 A JP S6422054A
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- electrode
- polysilicon film
- film
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To make it difficult to be affected by the parasitic capacitance by forming both electrodes of a capacitor of the same film of the gate electrode of an MOS element or the emitter electrode of a bipolar element, respectively. CONSTITUTION:One polysilicon film 8 of a capacitor section 17 consists of a polysilicon film 8 constituting the gate electrode of an MOS element 18, an insulating film 10 of the capacitor section 17 is consists of an insulating film 10 of a bipolar element 19, and the counter electrode (polysilicon film 11) of the capacitor section 17 consists of a polysilicon film 11 constituting the emitter electrode of the bipolar element 19. Accordingly, since each electrode of the capacitor is formed along with a different layer from the diffusion layer of the MOS element, a capacitor having a small parasitic capacitance can be obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17961087A JPS6422054A (en) | 1987-07-17 | 1987-07-17 | Manufacture of capacitor of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17961087A JPS6422054A (en) | 1987-07-17 | 1987-07-17 | Manufacture of capacitor of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6422054A true JPS6422054A (en) | 1989-01-25 |
Family
ID=16068760
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17961087A Pending JPS6422054A (en) | 1987-07-17 | 1987-07-17 | Manufacture of capacitor of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6422054A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0330431A (en) * | 1989-06-28 | 1991-02-08 | Fujitsu Ltd | Bipolar semiconductor device and manufacture thereof |
JPH09193121A (en) * | 1996-01-12 | 1997-07-29 | Shinei Kiko Kk | Pressure roll molding machine |
US5736776A (en) * | 1994-03-01 | 1998-04-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
US6204104B1 (en) | 1997-11-21 | 2001-03-20 | Nec Corporation | Semiconductor device and manufacturing method thereof |
-
1987
- 1987-07-17 JP JP17961087A patent/JPS6422054A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0330431A (en) * | 1989-06-28 | 1991-02-08 | Fujitsu Ltd | Bipolar semiconductor device and manufacture thereof |
US5736776A (en) * | 1994-03-01 | 1998-04-07 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
US6096619A (en) * | 1994-03-01 | 2000-08-01 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device comprising a capacitor with an intrinsic polysilicon electrode |
JPH09193121A (en) * | 1996-01-12 | 1997-07-29 | Shinei Kiko Kk | Pressure roll molding machine |
US6204104B1 (en) | 1997-11-21 | 2001-03-20 | Nec Corporation | Semiconductor device and manufacturing method thereof |
US6307227B2 (en) | 1997-11-21 | 2001-10-23 | Nec Corporation | Semiconductor device and manufacturing method thereof |
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