JPS6441262A - Memory cell - Google Patents
Memory cellInfo
- Publication number
- JPS6441262A JPS6441262A JP62196185A JP19618587A JPS6441262A JP S6441262 A JPS6441262 A JP S6441262A JP 62196185 A JP62196185 A JP 62196185A JP 19618587 A JP19618587 A JP 19618587A JP S6441262 A JPS6441262 A JP S6441262A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- interlayer insulating
- mos transistor
- diffusion layer
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
Abstract
PURPOSE:To increase capacitance, by forming a capacitor on the wall of a groove dug so as to reach a diffusion layer, said groove being formed in a comparatively thick interlayer insulating film formed so as to cover a MOS transistor in a memory cell. CONSTITUTION:In a comparatively thick interlayer insulating film 103 formed so as to cover a MOS transistor 100, a groove 201 is formed so as to reach the diffusion layer 110 (drain or source) of a MOS transistor 100. On the inner wall of the groove 201, a capacitor 200 composed of upper and lower electrodes 200, 210 of, e.g., polycrystalline silicon and a thin dielectric film 203 is formed. The lower electrode 210 is connected to the diffusion layer 120. By increasing adequately the thickness of the interlayer insulating film 103, a sufficient electrostatic capacitance can be obtained even if a cell area is made small.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62196185A JPS6441262A (en) | 1987-08-07 | 1987-08-07 | Memory cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62196185A JPS6441262A (en) | 1987-08-07 | 1987-08-07 | Memory cell |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6441262A true JPS6441262A (en) | 1989-02-13 |
Family
ID=16353607
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62196185A Pending JPS6441262A (en) | 1987-08-07 | 1987-08-07 | Memory cell |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6441262A (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01262658A (en) * | 1988-04-13 | 1989-10-19 | Nec Corp | Dynamic random access memory device |
JPH02254751A (en) * | 1989-03-29 | 1990-10-15 | Fujitsu Ltd | Semiconductor memory cell |
JPH03116965A (en) * | 1989-09-29 | 1991-05-17 | Mitsubishi Electric Corp | Memory cell structure |
JPH05243517A (en) * | 1992-02-25 | 1993-09-21 | Nec Corp | Semiconductor device |
US5248628A (en) * | 1989-09-08 | 1993-09-28 | Kabushiki Kaisha Toshiba | Method of fabricating a semiconductor memory device |
JPH07202019A (en) * | 1993-12-28 | 1995-08-04 | Nec Corp | Semiconductor integrated circuit device and its manufacture |
JPH0846152A (en) * | 1994-07-29 | 1996-02-16 | Nec Corp | Semiconductor memory and manufacture |
WO1996026544A1 (en) * | 1995-02-22 | 1996-08-29 | Micron Technology, Inc. | Method of forming a dram bit line contact |
US5686747A (en) * | 1993-02-12 | 1997-11-11 | Micron Technology, Inc. | Integrated circuits comprising interconnecting plugs |
US5705838A (en) * | 1993-02-12 | 1998-01-06 | Micron Technology, Inc. | Array of bit line over capacitor array of memory cells |
JP2000208745A (en) * | 1999-01-12 | 2000-07-28 | Lucent Technol Inc | Dual damascene mutual connection structure, integrated circuit device having metal electrode capacitor, and its manufacture |
US6653230B2 (en) | 1999-02-10 | 2003-11-25 | Nec Corporation | Semiconductor device having concave electrode and convex electrode and method of manufacturing thereof |
JP2004533106A (en) * | 2000-10-05 | 2004-10-28 | モトローラ・インコーポレイテッド | Semiconductor component manufacturing method and semiconductor component |
CN105529329A (en) * | 2014-09-29 | 2016-04-27 | 中芯国际集成电路制造(上海)有限公司 | Embedded DRAM device and formation method thereof |
-
1987
- 1987-08-07 JP JP62196185A patent/JPS6441262A/en active Pending
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01262658A (en) * | 1988-04-13 | 1989-10-19 | Nec Corp | Dynamic random access memory device |
JPH02254751A (en) * | 1989-03-29 | 1990-10-15 | Fujitsu Ltd | Semiconductor memory cell |
US5248628A (en) * | 1989-09-08 | 1993-09-28 | Kabushiki Kaisha Toshiba | Method of fabricating a semiconductor memory device |
JPH03116965A (en) * | 1989-09-29 | 1991-05-17 | Mitsubishi Electric Corp | Memory cell structure |
JPH05243517A (en) * | 1992-02-25 | 1993-09-21 | Nec Corp | Semiconductor device |
US5686747A (en) * | 1993-02-12 | 1997-11-11 | Micron Technology, Inc. | Integrated circuits comprising interconnecting plugs |
US5705838A (en) * | 1993-02-12 | 1998-01-06 | Micron Technology, Inc. | Array of bit line over capacitor array of memory cells |
US5821140A (en) * | 1993-02-12 | 1998-10-13 | Micron Technology, Inc. | Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells |
US5900660A (en) * | 1993-02-12 | 1999-05-04 | Micron Technology, Inc. | Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory calls |
US6110774A (en) * | 1993-02-12 | 2000-08-29 | Micron Technology, Inc. | Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells |
JPH07202019A (en) * | 1993-12-28 | 1995-08-04 | Nec Corp | Semiconductor integrated circuit device and its manufacture |
JPH0846152A (en) * | 1994-07-29 | 1996-02-16 | Nec Corp | Semiconductor memory and manufacture |
WO1996026544A1 (en) * | 1995-02-22 | 1996-08-29 | Micron Technology, Inc. | Method of forming a dram bit line contact |
JP2000208745A (en) * | 1999-01-12 | 2000-07-28 | Lucent Technol Inc | Dual damascene mutual connection structure, integrated circuit device having metal electrode capacitor, and its manufacture |
US6653230B2 (en) | 1999-02-10 | 2003-11-25 | Nec Corporation | Semiconductor device having concave electrode and convex electrode and method of manufacturing thereof |
JP2004533106A (en) * | 2000-10-05 | 2004-10-28 | モトローラ・インコーポレイテッド | Semiconductor component manufacturing method and semiconductor component |
CN105529329A (en) * | 2014-09-29 | 2016-04-27 | 中芯国际集成电路制造(上海)有限公司 | Embedded DRAM device and formation method thereof |
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