KR900015311A - Semiconductor device and manufacturing method - Google Patents

Abstract

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Description

Semiconductor device and manufacturing method

Since this is an open matter, no full text was included.

1 is a cross-sectional view showing an embodiment of a semiconductor device according to the present invention;

2 is an embodiment of a circuit consisting of a MOS transistor assembled to the semiconductor device.

Claims (10)

A semiconductor device comprising at least two MOS transistors composed of a polycrystalline silicon layer containing at least the same channel type and containing a gate electrode, and a bipolar transistor composed of a polycrystalline silicon layer containing impurities with a base electrode. Forming a gate electrode into a first conductive polycrystalline silicon layer, covering a side surface of the first conductive polycrystalline silicon layer with an insulating film, and a gate electrode of a next MOS transistor; And a base electrode of the bipolar transistor, wherein the base electrode of the bipolar transistor forms a first conductive polycrystalline silicon layer and a conductive type according to the first conductive polycrystalline silicon layer. Same as any of the above processes for forming polycrystalline silicon of A method of manufacturing a semiconductor device, characterized in that to form the. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of covering the side surfaces of the first conductive polycrystalline silicon layer and all conductive polycrystalline silicon with an insulating film. The process of claim 1, wherein the emitter electrode of the bipolar transistor is also composed of a polycrystalline silicon layer containing impurities, and the polycrystalline silicon layer is formed of the first conductive polycrystalline silicon layer and the first conductive type. A method of manufacturing a semiconductor device, characterized in that the polycrystalline silicon layer is formed simultaneously with a process other than a process simultaneously formed with a base electrode of a bipolar transistor in the process of forming polycrystalline silicon of a next conductivity type. 2. The MOS transistor according to claim 1, wherein the drain layer and the source layer are connected to a channel region between the drain layer and the source layer in the MOS transistor which forms a polycrystalline silicon layer containing a channel type and the next impurity in each MOS transistor. A method of manufacturing a semiconductor device, comprising adding a step of forming a semiconductor layer of the same type. A semiconductor device comprising two or more MOS transistors each having a different channel type and comprising a polycrystalline silicon layer containing impurity gate electrodes, and a bipolar transistor composed of a polycrystalline silicon layer containing impurity base electrodes. Forming a gate electrode from a first conductive polycrystalline silicon layer, coating a side surface of the first conductive polycrystalline silicon layer with an insulating film, and a gate electrode of a next MOS transistor. A process of forming a polycrystalline silicon layer of a conductivity type different from that of the silicon layer, and the base electrode of the bipolar transistor has a conductivity according to the process of forming the first conductive polycrystalline silicon layer and the first conductive polycrystalline silicon layer. Simultaneous with any of the above processes for forming a polycrystalline silicon of a type The semiconductor device manufacturing method characterized in that it is formed in. A semiconductor device comprising at least two MOS transistors having at least the same channel type and comprising a polycrystalline silicon layer containing a gate electrode, wherein the gate electrode of one MOS transistor is formed of a first conductive polycrystalline silicon layer; And a step of covering the side surface of the first conductive polycrystalline silicon layer with an insulating film and forming a gate electrode of the other MOS transistor from a polycrystalline silicon layer of a conductive type different from the first conductive polycrystalline silicon layer. A method for manufacturing a semiconductor device, characterized by the above-mentioned. In a semiconductor device comprising at least two MOS transistors of at least the same channel type and comprising a polycrystalline silicon layer containing impurity gate electrodes, and a bipolar transistor comprising a polycrystalline silicon layer containing impurity base electrodes, one transistor comprises: The bipolar transistor has a gate electrode formed of a first conductive polycrystalline silicon layer and covered with an insulating film on its side, and the next transistor has a gate electrode formed of a conductive polycrystalline silicon layer different from the thirteenth conductive polycrystalline silicon layer. And the transistor has a base electrode formed of a polycrystalline silicon layer containing impurities. The semiconductor device according to claim 7, wherein the side surfaces of the first conductive polycrystalline silicon layer and the polycrystalline silicon layer of the conductive string different from each other are covered with an insulating film. The semiconductor device according to claim 7, wherein the bipolar transistor has an emitter electrode formed of a polycrystalline silicon layer. 10. The MOS transistor according to claim 9, wherein the drain layer and the source layer are connected to a channel region between the drain layer and the source layer in the MOS transistor which forms a polycrystalline silicon layer containing the channel type and the next impurity in each MOS transistor. A semiconductor device comprising the same type of semiconductor layer. ※ Note: This is to be disclosed based on the first application.