KR950026008A - Gate electrode shared transistor - Google Patents

Gate electrode shared transistor Download PDF

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Publication number
KR950026008A
KR950026008A KR1019940003877A KR19940003877A KR950026008A KR 950026008 A KR950026008 A KR 950026008A KR 1019940003877 A KR1019940003877 A KR 1019940003877A KR 19940003877 A KR19940003877 A KR 19940003877A KR 950026008 A KR950026008 A KR 950026008A
Authority
KR
South Korea
Prior art keywords
gate electrode
transistor
shared
electrode shared
gate
Prior art date
Application number
KR1019940003877A
Other languages
Korean (ko)
Inventor
황준
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940003877A priority Critical patent/KR950026008A/en
Priority to CN95100427A priority patent/CN1111826A/en
Publication of KR950026008A publication Critical patent/KR950026008A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 반도체 직접회로 제조공정 중 트랜지스터 제조방법에 관한 것으로, 특히 하나의 게이트전극 공유트랜지스터에 있어서, 중앙의 게이트 전극(13)을 공유하여 아래쪽은 반도체 기판(10)을 이용하여 소스/드레인 (7)을 형성하고, 위쪽의 소스/드레인(77)은 전도막(100)을 게이트절연막(55) 상부에 적층시킨후 불순물 도핑에 의해 이루어지는 것을 특징으로 함으로써 본 발명은 동일층에 형성된 하나의 게이트를 공유하는 트랜지스터를 형성하여 단차 완화와 공정 단순화 효과를 동시에 얻을 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a transistor in a semiconductor integrated circuit manufacturing process. In particular, in one gate electrode shared transistor, the gate / 13 of the center is shared and the bottom thereof is formed by using a semiconductor substrate 10. 7), and the upper source / drain 77 is formed by stacking the conductive film 100 on the gate insulating film 55 and then doping with impurity. By forming a transistor that shares the same, the step difference mitigation and process simplification effect can be simultaneously obtained.

Description

게이트전극 공유 트랜지스터Gate electrode shared transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 따른 게이트전극 공유 트랜지스터의 구조도,3 is a structural diagram of a gate electrode sharing transistor according to the present invention;

제4A도는 제3도의 회로도.4A is a circuit diagram of FIG.

Claims (1)

하나의 게이트전극을 두 개의 트랜지스터가 공유하는 게이트전극 공유 트랜지스터에 있어서, 중앙의 게이트전극(13)을 공유하여 아래쪽은 반도체 기판(10)을 이용하여 소스/드레인(7)을 형성하고, 위쪽의 소스/드레인(77)은 전도막(100)을 게이트절연막(55) 상부에 적층시킨후 불순물 도핑에 의해 이루어지는 것을 특징으로 하는 게이트전극 공유 트랜지스터.In a gate electrode sharing transistor in which one gate electrode is shared by two transistors, the gate electrode 13 is shared in the center, and the source / drain 7 is formed on the lower side using the semiconductor substrate 10, and The source / drain 77 is formed by stacking a conductive film 100 on the gate insulating film 55 and then performing impurity doping. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940003877A 1994-02-28 1994-02-28 Gate electrode shared transistor KR950026008A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019940003877A KR950026008A (en) 1994-02-28 1994-02-28 Gate electrode shared transistor
CN95100427A CN1111826A (en) 1994-02-28 1995-02-27 Common gate transistor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940003877A KR950026008A (en) 1994-02-28 1994-02-28 Gate electrode shared transistor

Publications (1)

Publication Number Publication Date
KR950026008A true KR950026008A (en) 1995-09-18

Family

ID=19378123

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940003877A KR950026008A (en) 1994-02-28 1994-02-28 Gate electrode shared transistor

Country Status (2)

Country Link
KR (1) KR950026008A (en)
CN (1) CN1111826A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0167273B1 (en) * 1995-12-02 1998-12-15 문정환 High voltage mosfet device and manufacturing method thereof
CN105438566B (en) * 2015-12-17 2017-11-24 温州市国泰轻工机械有限公司 One kind falls cup structure

Also Published As

Publication number Publication date
CN1111826A (en) 1995-11-15

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