JPS5580357A - Manufacture of insulated gate type field effect transistor - Google Patents
Manufacture of insulated gate type field effect transistorInfo
- Publication number
- JPS5580357A JPS5580357A JP15540878A JP15540878A JPS5580357A JP S5580357 A JPS5580357 A JP S5580357A JP 15540878 A JP15540878 A JP 15540878A JP 15540878 A JP15540878 A JP 15540878A JP S5580357 A JPS5580357 A JP S5580357A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- polysilicon
- oxidized film
- drain
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To decrease a parasitic capacitance by a method wherein drain and source layers are provided through a polysilicon electrode according to diffusion, and a gate oxidized film is formed newly between both the layers with polysilicon working as a mask.
CONSTITUTION: Polysilicon layers 3D, 3S are formed on an oxidized film 2 of a p--type silicon substrate through openings. After forming n-type source and drain layers 4D, 4S through polysilicon according to P-diffusion, an oxidized film between the layers 4D, 4S is removed, a gate oxidized film 2G is formed, and a gate electrode 6 is formed selectively. According to this constitution, the drain can be formed in a minimum area necessary for injection with the substrate, and an interval with the gate electrode can be made as narrow as both the two overlap one another through the insulating film, therefore a parasitic capacitance can be decreased, an offset can also be suppressed throughly, thus obtaining FET even in characteristic.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15540878A JPS5580357A (en) | 1978-12-13 | 1978-12-13 | Manufacture of insulated gate type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15540878A JPS5580357A (en) | 1978-12-13 | 1978-12-13 | Manufacture of insulated gate type field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5580357A true JPS5580357A (en) | 1980-06-17 |
Family
ID=15605320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15540878A Pending JPS5580357A (en) | 1978-12-13 | 1978-12-13 | Manufacture of insulated gate type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5580357A (en) |
-
1978
- 1978-12-13 JP JP15540878A patent/JPS5580357A/en active Pending
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