JPS53108383A - Semiconductor deivce and its manufacture - Google Patents

Semiconductor deivce and its manufacture

Info

Publication number
JPS53108383A
JPS53108383A JP2268477A JP2268477A JPS53108383A JP S53108383 A JPS53108383 A JP S53108383A JP 2268477 A JP2268477 A JP 2268477A JP 2268477 A JP2268477 A JP 2268477A JP S53108383 A JPS53108383 A JP S53108383A
Authority
JP
Japan
Prior art keywords
manufacture
threshold voltage
deivce
semiconductor
mos fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2268477A
Other languages
Japanese (ja)
Inventor
Ryoichi Hori
Kiyoo Ito
Seiji Kubo
Hideo Sunami
Tetsukazu Hashimoto
Shigeru Nishimatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2268477A priority Critical patent/JPS53108383A/en
Publication of JPS53108383A publication Critical patent/JPS53108383A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To establish a plurality of MOS FET's having different threshold voltage each other and with less expensive, by setting the threshold voltage higher to the MOS FET formed with the upper layer gate electrode of the semiconductor device having a plurality of electrode layers.
JP2268477A 1977-03-04 1977-03-04 Semiconductor deivce and its manufacture Pending JPS53108383A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2268477A JPS53108383A (en) 1977-03-04 1977-03-04 Semiconductor deivce and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2268477A JPS53108383A (en) 1977-03-04 1977-03-04 Semiconductor deivce and its manufacture

Publications (1)

Publication Number Publication Date
JPS53108383A true JPS53108383A (en) 1978-09-21

Family

ID=12089681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2268477A Pending JPS53108383A (en) 1977-03-04 1977-03-04 Semiconductor deivce and its manufacture

Country Status (1)

Country Link
JP (1) JPS53108383A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0519886U (en) * 1991-08-22 1993-03-12 株式会社富士通ゼネラル Electric refrigerator
US5556800A (en) * 1992-04-03 1996-09-17 Kabushiki Kaisha Toshiba Method of manufacturing a mask read only memory (ROM) for storing multi-value data

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367388A (en) * 1976-11-27 1978-06-15 Mitsubishi Electric Corp Memory semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367388A (en) * 1976-11-27 1978-06-15 Mitsubishi Electric Corp Memory semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0519886U (en) * 1991-08-22 1993-03-12 株式会社富士通ゼネラル Electric refrigerator
US5556800A (en) * 1992-04-03 1996-09-17 Kabushiki Kaisha Toshiba Method of manufacturing a mask read only memory (ROM) for storing multi-value data

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