JPS5418687A - Insulating gate field effect transistor - Google Patents

Insulating gate field effect transistor

Info

Publication number
JPS5418687A
JPS5418687A JP8395577A JP8395577A JPS5418687A JP S5418687 A JPS5418687 A JP S5418687A JP 8395577 A JP8395577 A JP 8395577A JP 8395577 A JP8395577 A JP 8395577A JP S5418687 A JPS5418687 A JP S5418687A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
gate field
insulating gate
drain electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8395577A
Other languages
Japanese (ja)
Inventor
Kazuo Terada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8395577A priority Critical patent/JPS5418687A/en
Publication of JPS5418687A publication Critical patent/JPS5418687A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To enhance the current driving capacity by dividing the gate electrode into the first part of the source electrode side and the second part of the drain electrode side while approximating to each other and then securing the ON/OFF action at the first part and giving a conduction between the drain electrode and the inversion layer right under the first part at the second part respectively.
COPYRIGHT: (C)1979,JPO&Japio
JP8395577A 1977-07-12 1977-07-12 Insulating gate field effect transistor Pending JPS5418687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8395577A JPS5418687A (en) 1977-07-12 1977-07-12 Insulating gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8395577A JPS5418687A (en) 1977-07-12 1977-07-12 Insulating gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS5418687A true JPS5418687A (en) 1979-02-10

Family

ID=13816993

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8395577A Pending JPS5418687A (en) 1977-07-12 1977-07-12 Insulating gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS5418687A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4716446A (en) * 1982-12-16 1987-12-29 U.S. Philips Corporation Insulated dual gate field effect transistor
US5067001A (en) * 1989-05-05 1991-11-19 Samsung Electronics Co., Ltd. Structure and method for manufacturing a series read only memory with spacer film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4716446A (en) * 1982-12-16 1987-12-29 U.S. Philips Corporation Insulated dual gate field effect transistor
US5067001A (en) * 1989-05-05 1991-11-19 Samsung Electronics Co., Ltd. Structure and method for manufacturing a series read only memory with spacer film

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