JPS5418687A - Insulating gate field effect transistor - Google Patents
Insulating gate field effect transistorInfo
- Publication number
- JPS5418687A JPS5418687A JP8395577A JP8395577A JPS5418687A JP S5418687 A JPS5418687 A JP S5418687A JP 8395577 A JP8395577 A JP 8395577A JP 8395577 A JP8395577 A JP 8395577A JP S5418687 A JPS5418687 A JP S5418687A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- gate field
- insulating gate
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To enhance the current driving capacity by dividing the gate electrode into the first part of the source electrode side and the second part of the drain electrode side while approximating to each other and then securing the ON/OFF action at the first part and giving a conduction between the drain electrode and the inversion layer right under the first part at the second part respectively.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8395577A JPS5418687A (en) | 1977-07-12 | 1977-07-12 | Insulating gate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8395577A JPS5418687A (en) | 1977-07-12 | 1977-07-12 | Insulating gate field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5418687A true JPS5418687A (en) | 1979-02-10 |
Family
ID=13816993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8395577A Pending JPS5418687A (en) | 1977-07-12 | 1977-07-12 | Insulating gate field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5418687A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4716446A (en) * | 1982-12-16 | 1987-12-29 | U.S. Philips Corporation | Insulated dual gate field effect transistor |
US5067001A (en) * | 1989-05-05 | 1991-11-19 | Samsung Electronics Co., Ltd. | Structure and method for manufacturing a series read only memory with spacer film |
-
1977
- 1977-07-12 JP JP8395577A patent/JPS5418687A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4716446A (en) * | 1982-12-16 | 1987-12-29 | U.S. Philips Corporation | Insulated dual gate field effect transistor |
US5067001A (en) * | 1989-05-05 | 1991-11-19 | Samsung Electronics Co., Ltd. | Structure and method for manufacturing a series read only memory with spacer film |
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