JPS57201061A - Manufacture of thin semiconductor film resistor - Google Patents

Manufacture of thin semiconductor film resistor

Info

Publication number
JPS57201061A
JPS57201061A JP8558281A JP8558281A JPS57201061A JP S57201061 A JPS57201061 A JP S57201061A JP 8558281 A JP8558281 A JP 8558281A JP 8558281 A JP8558281 A JP 8558281A JP S57201061 A JPS57201061 A JP S57201061A
Authority
JP
Japan
Prior art keywords
semiconductor film
thin semiconductor
film resistor
manufacture
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8558281A
Other languages
Japanese (ja)
Inventor
Kazumichi Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8558281A priority Critical patent/JPS57201061A/en
Publication of JPS57201061A publication Critical patent/JPS57201061A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To form a thin semiconductor film resistor having excellent reproducibility and uniformity by implanting ions of sufficient dose to a thin semiconductor film polycrystal to convert to amorphous state. CONSTITUTION:A polycrystalline Si 53 is accumulated on an SiO2 52 on a wafer 51. Si<+> ions are implanted in the layer 53. After annealing, the polycrystalline Si is etched insularly. With the mask 55 n<+> type impurity As ions are implanted. After annealing, a CVD SiO2 film 56 is recovered on the overall surface, is patterned, thereby forming a resistance element. In this manner, a thin semiconductor film resistor having excellent reproducibility and uniformity can be obtained.
JP8558281A 1981-06-05 1981-06-05 Manufacture of thin semiconductor film resistor Pending JPS57201061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8558281A JPS57201061A (en) 1981-06-05 1981-06-05 Manufacture of thin semiconductor film resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8558281A JPS57201061A (en) 1981-06-05 1981-06-05 Manufacture of thin semiconductor film resistor

Publications (1)

Publication Number Publication Date
JPS57201061A true JPS57201061A (en) 1982-12-09

Family

ID=13862799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8558281A Pending JPS57201061A (en) 1981-06-05 1981-06-05 Manufacture of thin semiconductor film resistor

Country Status (1)

Country Link
JP (1) JPS57201061A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168665A (en) * 1983-03-07 1984-09-22 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Semiconductor memory device and method of producing same
JPS6257224A (en) * 1985-09-06 1987-03-12 Toshiba Corp Manufacture of semiconductor device
JPS6446966A (en) * 1987-02-20 1989-02-21 Fairchild Semiconductor Manufacture of polycrystalline silicon resistor with required temperaure coefficient
JPH0246756A (en) * 1988-08-08 1990-02-16 Mitsubishi Electric Corp Manufacture of semiconductor capacitor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59168665A (en) * 1983-03-07 1984-09-22 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Semiconductor memory device and method of producing same
JPS6257224A (en) * 1985-09-06 1987-03-12 Toshiba Corp Manufacture of semiconductor device
JPS6446966A (en) * 1987-02-20 1989-02-21 Fairchild Semiconductor Manufacture of polycrystalline silicon resistor with required temperaure coefficient
JPH0246756A (en) * 1988-08-08 1990-02-16 Mitsubishi Electric Corp Manufacture of semiconductor capacitor

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