JPS6428857A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6428857A
JPS6428857A JP18339987A JP18339987A JPS6428857A JP S6428857 A JPS6428857 A JP S6428857A JP 18339987 A JP18339987 A JP 18339987A JP 18339987 A JP18339987 A JP 18339987A JP S6428857 A JPS6428857 A JP S6428857A
Authority
JP
Japan
Prior art keywords
film
poly
window
resistor
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18339987A
Other languages
Japanese (ja)
Inventor
Masashi Watanabe
Akira Matsuura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP18339987A priority Critical patent/JPS6428857A/en
Publication of JPS6428857A publication Critical patent/JPS6428857A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Abstract

PURPOSE:To improve the temperature characteristics of semiconductor products, by forming simultaneously a polycrystalline silicon resistor element and a base diffusion layer whose temperature dependency is almost negligible. CONSTITUTION:On the surface of a semiconductor substrate 1, an SiO2 film 2 is grown, on which an Si film 5 for a poly-Si resistor is partially formed at 570 deg.C. A window is made on the SiO2 film 2 by applying a photoresist 3 to a mask, and further a second photoresist 7 is formed on the whole surface. A window is made on a part of the resist 7 by using a photo mask, and a part of the poly-Si film 5 and the Si layer wherein the window is made is exposed. By ion implantation of impurity B<+>, the poly-Si film 5 and the Si layer surface wherein the window is made are doped with impurity. Then the resist 7 is eliminated, and a diffusion resistor 4 and a poly-Si resistor 6 are obtained after annealing. Thereby, the temperature characteristics of semiconductor products can be improved.
JP18339987A 1987-07-24 1987-07-24 Manufacture of semiconductor device Pending JPS6428857A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18339987A JPS6428857A (en) 1987-07-24 1987-07-24 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18339987A JPS6428857A (en) 1987-07-24 1987-07-24 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6428857A true JPS6428857A (en) 1989-01-31

Family

ID=16135098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18339987A Pending JPS6428857A (en) 1987-07-24 1987-07-24 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6428857A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2592018A (en) * 2020-02-11 2021-08-18 X Fab Global Services Gmbh Resistor circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2592018A (en) * 2020-02-11 2021-08-18 X Fab Global Services Gmbh Resistor circuit
GB2592018B (en) * 2020-02-11 2023-02-22 X Fab Global Services Gmbh Resistor circuit
US11646137B2 (en) 2020-02-11 2023-05-09 X-FAB Global Services GmbH Resistor circuit
DE102021101907B4 (en) 2020-02-11 2023-08-31 X-FAB Global Services GmbH RESISTANCE

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