JPS52128083A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS52128083A
JPS52128083A JP4507776A JP4507776A JPS52128083A JP S52128083 A JPS52128083 A JP S52128083A JP 4507776 A JP4507776 A JP 4507776A JP 4507776 A JP4507776 A JP 4507776A JP S52128083 A JPS52128083 A JP S52128083A
Authority
JP
Japan
Prior art keywords
resistor
manufacture
semiconductor device
impurity
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4507776A
Other languages
Japanese (ja)
Inventor
Haruyasu Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4507776A priority Critical patent/JPS52128083A/en
Publication of JPS52128083A publication Critical patent/JPS52128083A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a resistor of small temperature dependency by forming a resistor of poly crystal Si on SiO2 film under the growing temperature of 600 - 700 deg.C and by introducing the impurity of over 5 X 10<14> atom/cm<3> into the resistor through diffusion or ion injection.
JP4507776A 1976-04-20 1976-04-20 Manufacture of semiconductor device Pending JPS52128083A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4507776A JPS52128083A (en) 1976-04-20 1976-04-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4507776A JPS52128083A (en) 1976-04-20 1976-04-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS52128083A true JPS52128083A (en) 1977-10-27

Family

ID=12709262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4507776A Pending JPS52128083A (en) 1976-04-20 1976-04-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS52128083A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182259A (en) * 1982-04-01 1983-10-25 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming polysilicon resistor
JPS58225648A (en) * 1982-06-23 1983-12-27 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182259A (en) * 1982-04-01 1983-10-25 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming polysilicon resistor
JPH0550144B2 (en) * 1982-04-01 1993-07-28 Ibm
JPS58225648A (en) * 1982-06-23 1983-12-27 Nec Corp Semiconductor device

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