JPS5436179A - Forming method of nitride film - Google Patents

Forming method of nitride film

Info

Publication number
JPS5436179A
JPS5436179A JP10170077A JP10170077A JPS5436179A JP S5436179 A JPS5436179 A JP S5436179A JP 10170077 A JP10170077 A JP 10170077A JP 10170077 A JP10170077 A JP 10170077A JP S5436179 A JPS5436179 A JP S5436179A
Authority
JP
Japan
Prior art keywords
nitride film
forming method
reproducibility
manufacture
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10170077A
Other languages
Japanese (ja)
Inventor
Masahiro Shibagaki
Yasuhiro Horiike
Takashi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10170077A priority Critical patent/JPS5436179A/en
Publication of JPS5436179A publication Critical patent/JPS5436179A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To manufacture Si3N4 having the growing speed with reproducibility and refractive index, by reacting SiH4 with active N2 on the substrate heated more than 150°C.
COPYRIGHT: (C)1979,JPO&Japio
JP10170077A 1977-08-26 1977-08-26 Forming method of nitride film Pending JPS5436179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10170077A JPS5436179A (en) 1977-08-26 1977-08-26 Forming method of nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10170077A JPS5436179A (en) 1977-08-26 1977-08-26 Forming method of nitride film

Publications (1)

Publication Number Publication Date
JPS5436179A true JPS5436179A (en) 1979-03-16

Family

ID=14307587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10170077A Pending JPS5436179A (en) 1977-08-26 1977-08-26 Forming method of nitride film

Country Status (1)

Country Link
JP (1) JPS5436179A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125635A (en) * 1979-03-23 1980-09-27 Hitachi Ltd Semiconductor device
JPS609180A (en) * 1983-06-13 1985-01-18 アメリカン・テレフオン・アンド・テレグラフ・カムパニ− Method of producing semiconductor photodetector
EP0587500A1 (en) * 1992-09-11 1994-03-16 France Telecom Fabrication method of striped electro-optical devices, especially lagers and devices made like-wise

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125635A (en) * 1979-03-23 1980-09-27 Hitachi Ltd Semiconductor device
JPS609180A (en) * 1983-06-13 1985-01-18 アメリカン・テレフオン・アンド・テレグラフ・カムパニ− Method of producing semiconductor photodetector
JPH0586874B2 (en) * 1983-06-13 1993-12-14 American Telephone & Telegraph
EP0587500A1 (en) * 1992-09-11 1994-03-16 France Telecom Fabrication method of striped electro-optical devices, especially lagers and devices made like-wise
FR2695761A1 (en) * 1992-09-11 1994-03-18 Loualiche Slimane Method for manufacturing electro-optical ribbon devices, in particular lasers, and devices thus obtained.
US5511088A (en) * 1992-09-11 1996-04-23 France Telecom Process for fabricating strip optoelectronic devices, particularly lasers, and devices obtained

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