JPS53136487A - Manufacture for junction type field effect transistor - Google Patents

Manufacture for junction type field effect transistor

Info

Publication number
JPS53136487A
JPS53136487A JP5101777A JP5101777A JPS53136487A JP S53136487 A JPS53136487 A JP S53136487A JP 5101777 A JP5101777 A JP 5101777A JP 5101777 A JP5101777 A JP 5101777A JP S53136487 A JPS53136487 A JP S53136487A
Authority
JP
Japan
Prior art keywords
manufacture
field effect
effect transistor
type field
junction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5101777A
Other languages
Japanese (ja)
Other versions
JPS5653229B2 (en
Inventor
Kosuke Yasuno
Tatsunori Nakajima
Kuni Ogawa
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5101777A priority Critical patent/JPS53136487A/en
Publication of JPS53136487A publication Critical patent/JPS53136487A/en
Publication of JPS5653229B2 publication Critical patent/JPS5653229B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To improve the gm of a J-FET with excellent uniformity and reproducibility, by utilizing the steps between the coated diffusing agent and the mask material SiO2.
COPYRIGHT: (C)1978,JPO&Japio
JP5101777A 1977-05-02 1977-05-02 Manufacture for junction type field effect transistor Granted JPS53136487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5101777A JPS53136487A (en) 1977-05-02 1977-05-02 Manufacture for junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5101777A JPS53136487A (en) 1977-05-02 1977-05-02 Manufacture for junction type field effect transistor

Publications (2)

Publication Number Publication Date
JPS53136487A true JPS53136487A (en) 1978-11-29
JPS5653229B2 JPS5653229B2 (en) 1981-12-17

Family

ID=12875010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5101777A Granted JPS53136487A (en) 1977-05-02 1977-05-02 Manufacture for junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS53136487A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299638A (en) * 2001-03-30 2002-10-11 Denso Corp Silicon carbide semiconductor device and its manufacturing method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH027313A (en) * 1988-06-27 1990-01-11 Matsushita Electric Ind Co Ltd Switch device of electronic musical instrument
JP2605013Y2 (en) * 1994-07-18 2000-06-19 株式会社光波 Push button type switch device for vending machine

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002299638A (en) * 2001-03-30 2002-10-11 Denso Corp Silicon carbide semiconductor device and its manufacturing method

Also Published As

Publication number Publication date
JPS5653229B2 (en) 1981-12-17

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