JPS53122361A - Manufacture for single crystal silicon thin film - Google Patents

Manufacture for single crystal silicon thin film

Info

Publication number
JPS53122361A
JPS53122361A JP3616177A JP3616177A JPS53122361A JP S53122361 A JPS53122361 A JP S53122361A JP 3616177 A JP3616177 A JP 3616177A JP 3616177 A JP3616177 A JP 3616177A JP S53122361 A JPS53122361 A JP S53122361A
Authority
JP
Japan
Prior art keywords
thin film
single crystal
crystal silicon
manufacture
silicon thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3616177A
Other languages
Japanese (ja)
Other versions
JPS5947453B2 (en
Inventor
Yasuo Wada
Hiroo Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP52036161A priority Critical patent/JPS5947453B2/en
Publication of JPS53122361A publication Critical patent/JPS53122361A/en
Publication of JPS5947453B2 publication Critical patent/JPS5947453B2/en
Expired legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To manufacture thin film of single crystal silicon by doping the impurity and annealing it, through deposit of amorphous or polycrystal silicon on the amorphous substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP52036161A 1977-04-01 1977-04-01 Method for manufacturing single crystal silicon thin film Expired JPS5947453B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52036161A JPS5947453B2 (en) 1977-04-01 1977-04-01 Method for manufacturing single crystal silicon thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52036161A JPS5947453B2 (en) 1977-04-01 1977-04-01 Method for manufacturing single crystal silicon thin film

Publications (2)

Publication Number Publication Date
JPS53122361A true JPS53122361A (en) 1978-10-25
JPS5947453B2 JPS5947453B2 (en) 1984-11-19

Family

ID=12462033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52036161A Expired JPS5947453B2 (en) 1977-04-01 1977-04-01 Method for manufacturing single crystal silicon thin film

Country Status (1)

Country Link
JP (1) JPS5947453B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159017A (en) * 1981-03-27 1982-10-01 Toshiba Corp Manufacture of semiconductor single crystal film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159017A (en) * 1981-03-27 1982-10-01 Toshiba Corp Manufacture of semiconductor single crystal film

Also Published As

Publication number Publication date
JPS5947453B2 (en) 1984-11-19

Similar Documents

Publication Publication Date Title
JPS53104156A (en) Manufacture for semiconductor device
JPS5247673A (en) Process for production of silicon crystal film
JPS5253658A (en) Method of introducing impurity into semiconductor
JPS53108389A (en) Manufacture for semiconductor device
JPS53122361A (en) Manufacture for single crystal silicon thin film
JPS53104162A (en) Forming method for epitaxial layer on semiconductor wafer
JPS53128285A (en) Semiconductor device and production of the same
JPS5380160A (en) Manufacture of substrate for semiconductor device
JPS52117900A (en) Growing method for single crystal thin film of bismuth oxide compounds
JPS53130974A (en) Manufacture for silicon thin film
JPS5399881A (en) Manufacture of dielectric separation substrate
JPS5326663A (en) Manu facture of semiconductor device
JPS5282087A (en) Production of solar cell
JPS51111057A (en) Crystal growing device
JPS5261475A (en) Production of silicon crystal film
JPS5328374A (en) Wafer production
JPS5350672A (en) Production of substrate for semiconductor device
JPS54586A (en) Production of semiconductor device
JPS53108766A (en) Vapor phase growth method of sos film
JPS5311574A (en) Production of semiconductor device
JPS5346292A (en) Production of semiconductor device
JPS5436192A (en) Manufacture for semiconductor
JPS548457A (en) Impurity introducing method to poly-crystal silicon
JPS5272162A (en) Production of semiconductor device
JPS5263673A (en) Production of semiconductor device