JPS5629342A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5629342A
JPS5629342A JP10464279A JP10464279A JPS5629342A JP S5629342 A JPS5629342 A JP S5629342A JP 10464279 A JP10464279 A JP 10464279A JP 10464279 A JP10464279 A JP 10464279A JP S5629342 A JPS5629342 A JP S5629342A
Authority
JP
Japan
Prior art keywords
layer
ions
implanted
yield
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10464279A
Other languages
Japanese (ja)
Inventor
Kenjirou Mitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10464279A priority Critical patent/JPS5629342A/en
Publication of JPS5629342A publication Critical patent/JPS5629342A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76289—Lateral isolation by air gap

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To contrive the improvement in the shortening of steps of manufacturing a semiconductor device and the yield thereof by forming simultaneously an impurity diffusing mask at the time of forming monocrystalline or polycrystalline Si resistor with another wire or using a wire formed on the resistance layer. CONSTITUTION:An SiO2 film 2 is formed on an Si substrate 1 to form selectively polysilicon layers 4, 5 thereon. It is thermally oxidized to form an SiO2 film 6 thereon, B ions are implanted thereon, and is coated then with polysilicon layer 7. It is photoetched to form wiring tubes 8, 9 thereon. Then, P ions are implanted in high density to form wiring layer 5b and resistance layer 5a thereon. When the superimposition of the polysilicon layers 5, 9 is reduced, the layer 5a is diffused from both sides by the heat treatment after implanting ions to form a wiring layer. In this manner the degree of freedom of designing is increased. This configuration can omit the step of manufacturing mask to improve the yield thereof.
JP10464279A 1979-08-17 1979-08-17 Manufacture of semiconductor device Pending JPS5629342A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10464279A JPS5629342A (en) 1979-08-17 1979-08-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10464279A JPS5629342A (en) 1979-08-17 1979-08-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5629342A true JPS5629342A (en) 1981-03-24

Family

ID=14386099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10464279A Pending JPS5629342A (en) 1979-08-17 1979-08-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5629342A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821426A (en) * 1981-07-30 1983-02-08 Teijin Ltd Polymer having joined cytotoxic substance and preparation thereof
JPH0729090U (en) * 1993-11-09 1995-06-02 和仁 大野 Concrete sewage basin
US5639688A (en) * 1993-05-21 1997-06-17 Harris Corporation Method of making integrated circuit structure with narrow line widths
JP2009192082A (en) * 2008-02-16 2009-08-27 Dr Ing Hcf Porsche Ag Transmission casing for motor vehicle
US10527152B2 (en) 2013-11-08 2020-01-07 Sew-Eurodrive Gmbh & Co. Kg Gear unit having a housing with lubrication groove

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821426A (en) * 1981-07-30 1983-02-08 Teijin Ltd Polymer having joined cytotoxic substance and preparation thereof
JPH029563B2 (en) * 1981-07-30 1990-03-02 Teijin Ltd
US5639688A (en) * 1993-05-21 1997-06-17 Harris Corporation Method of making integrated circuit structure with narrow line widths
US5773891A (en) * 1993-05-21 1998-06-30 Harris Corporation Integrated circuit method for and structure with narrow line widths
JPH0729090U (en) * 1993-11-09 1995-06-02 和仁 大野 Concrete sewage basin
JP2009192082A (en) * 2008-02-16 2009-08-27 Dr Ing Hcf Porsche Ag Transmission casing for motor vehicle
US10527152B2 (en) 2013-11-08 2020-01-07 Sew-Eurodrive Gmbh & Co. Kg Gear unit having a housing with lubrication groove

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