JPS57169267A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS57169267A JPS57169267A JP56053900A JP5390081A JPS57169267A JP S57169267 A JPS57169267 A JP S57169267A JP 56053900 A JP56053900 A JP 56053900A JP 5390081 A JP5390081 A JP 5390081A JP S57169267 A JPS57169267 A JP S57169267A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- impurity
- mosi2
- containing impurity
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 5
- 229910020968 MoSi2 Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To enhance the characteristic of a semiconductor device, by providing a metallic layer to prevent impurity diffusion between a layer containing impurity and a layer not containing impurity. CONSTITUTION:A P-doped gate electrode 30 of MoSi2, etc. is provided on a semiconductor substrate 21 having source and drain regions 31, 32, field inversion preventing layer 25 and field oxides layer 26 via a gage insulating layer 29 with the formation of a resistor constituted of a layer 36 not containing impurity such as poly Si thereon via the metallic ayer 35 of MoSi2, etc. which prevents the passage by P diffusion and contains no impurity. Thus, the yield of the element can be improved with wide spreading of degree of freedom for heat treatment condition and allows the manufacture of micro high-resistant poly-crystalline Si element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56053900A JPS57169267A (en) | 1981-04-10 | 1981-04-10 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56053900A JPS57169267A (en) | 1981-04-10 | 1981-04-10 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57169267A true JPS57169267A (en) | 1982-10-18 |
Family
ID=12955589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56053900A Pending JPS57169267A (en) | 1981-04-10 | 1981-04-10 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57169267A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6144457A (en) * | 1984-08-09 | 1986-03-04 | Nec Corp | Static type semiconductor memory |
| JPS61131558A (en) * | 1984-11-30 | 1986-06-19 | Toshiba Corp | Semiconductor device |
| JPS62247548A (en) * | 1986-04-18 | 1987-10-28 | Mitsubishi Electric Corp | Semiconductor device |
| US5541442A (en) * | 1994-08-31 | 1996-07-30 | International Business Machines Corporation | Integrated compact capacitor-resistor/inductor configuration |
-
1981
- 1981-04-10 JP JP56053900A patent/JPS57169267A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6144457A (en) * | 1984-08-09 | 1986-03-04 | Nec Corp | Static type semiconductor memory |
| JPS61131558A (en) * | 1984-11-30 | 1986-06-19 | Toshiba Corp | Semiconductor device |
| JPS62247548A (en) * | 1986-04-18 | 1987-10-28 | Mitsubishi Electric Corp | Semiconductor device |
| JPH0571181B2 (en) * | 1986-04-18 | 1993-10-06 | Mitsubishi Electric Corp | |
| US5541442A (en) * | 1994-08-31 | 1996-07-30 | International Business Machines Corporation | Integrated compact capacitor-resistor/inductor configuration |
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