JPS6425476A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS6425476A JPS6425476A JP18150587A JP18150587A JPS6425476A JP S6425476 A JPS6425476 A JP S6425476A JP 18150587 A JP18150587 A JP 18150587A JP 18150587 A JP18150587 A JP 18150587A JP S6425476 A JPS6425476 A JP S6425476A
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- oxide film
- high melting
- metal silicide
- point metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To reduce a wiring delay and to stabilize element characteristics by forming a polycide structure formed with a polycrystalline silicon having stable element characteristic or a thin high melting point metal silicide on the polycrystalline silicon only in the gate wiring of a transistor forming region. CONSTITUTION:A polycrystalline silicon 14 is formed on a gate oxide film 16, and high melting point metal silicide of Mo, Ti, W, Ta and the like is further formed thereon. Then, the step 13 of a selective oxide film and the high melting point metal silicide 15 except a transistor 19 are etched with a resist mask of a predetermined pattern to expose part of the silicon 14. After the resist mask is removed, an interlayer insulating film 17 is formed, and aluminum wirings 18 are formed. In the above forming steps, the impurity implantation into the silicon 14 is conducted by a POCl3 diffusing method or a phosphorus ion implanting method to obtain preferable characteristic of gate oxide film breakdown strength.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18150587A JPS6425476A (en) | 1987-07-21 | 1987-07-21 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18150587A JPS6425476A (en) | 1987-07-21 | 1987-07-21 | Semiconductor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6425476A true JPS6425476A (en) | 1989-01-27 |
Family
ID=16101934
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18150587A Pending JPS6425476A (en) | 1987-07-21 | 1987-07-21 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6425476A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5188962A (en) * | 1990-10-09 | 1993-02-23 | Eisai Co., Ltd. | Cell cultivating apparatus |
CN104257311A (en) * | 2010-12-17 | 2015-01-07 | 科勒公司 | Shower Bar System |
-
1987
- 1987-07-21 JP JP18150587A patent/JPS6425476A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5188962A (en) * | 1990-10-09 | 1993-02-23 | Eisai Co., Ltd. | Cell cultivating apparatus |
CN104257311A (en) * | 2010-12-17 | 2015-01-07 | 科勒公司 | Shower Bar System |
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