JPS648644A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS648644A
JPS648644A JP16448087A JP16448087A JPS648644A JP S648644 A JPS648644 A JP S648644A JP 16448087 A JP16448087 A JP 16448087A JP 16448087 A JP16448087 A JP 16448087A JP S648644 A JPS648644 A JP S648644A
Authority
JP
Japan
Prior art keywords
film
wirings
implanted
forming
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16448087A
Other languages
Japanese (ja)
Inventor
Koji Shiozaki
Hiroi Ootake
Masayoshi Koba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP16448087A priority Critical patent/JPS648644A/en
Publication of JPS648644A publication Critical patent/JPS648644A/en
Pending legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To improve reliability of multilayer interconnection by doping with impurity ions one part of all region of an insulating film on a semiconductor substrate or wirings, forming a contact hole at a predetermined position of the insulating film, selectively forming a metal material in the hole, and forming predetermined wirings by patterning. CONSTITUTION:First layer Al-Si wirings 2 are formed on a semiconductor substrate 1. Then, after it is covered with an interlayer insulating film 3, B<+> is implanted by an ion implanting method on the whole film 3. Thereafter, after a contact hole 5 is formed at a predetermined position of the film 3, tungsten 6 is selectively grown in the hole 5. Subsequently, second layer Al-Si wirings 7 are formed. An impurity 4 is implanted to the film 3 to selectively grow tungsten irrespective of the type of the film 3, thereby improving the reliability of multilayer interconnection. This is not limited to an embodiment, but various changes can be executed. For example, the type and quantity of the impurity ions to be implanted to the film may be suitable determined.
JP16448087A 1987-06-30 1987-06-30 Manufacture of semiconductor device Pending JPS648644A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16448087A JPS648644A (en) 1987-06-30 1987-06-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16448087A JPS648644A (en) 1987-06-30 1987-06-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS648644A true JPS648644A (en) 1989-01-12

Family

ID=15793974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16448087A Pending JPS648644A (en) 1987-06-30 1987-06-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS648644A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431440A (en) * 1987-07-28 1989-02-01 Seiko Instr & Electronics Manufacture of semiconductor device
US6348650B1 (en) 1999-03-24 2002-02-19 Ishizuka Electronics Corporation Thermopile infrared sensor and process for producing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431440A (en) * 1987-07-28 1989-02-01 Seiko Instr & Electronics Manufacture of semiconductor device
US6348650B1 (en) 1999-03-24 2002-02-19 Ishizuka Electronics Corporation Thermopile infrared sensor and process for producing the same

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