JPS648644A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS648644A JPS648644A JP16448087A JP16448087A JPS648644A JP S648644 A JPS648644 A JP S648644A JP 16448087 A JP16448087 A JP 16448087A JP 16448087 A JP16448087 A JP 16448087A JP S648644 A JPS648644 A JP S648644A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wirings
- implanted
- forming
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To improve reliability of multilayer interconnection by doping with impurity ions one part of all region of an insulating film on a semiconductor substrate or wirings, forming a contact hole at a predetermined position of the insulating film, selectively forming a metal material in the hole, and forming predetermined wirings by patterning. CONSTITUTION:First layer Al-Si wirings 2 are formed on a semiconductor substrate 1. Then, after it is covered with an interlayer insulating film 3, B<+> is implanted by an ion implanting method on the whole film 3. Thereafter, after a contact hole 5 is formed at a predetermined position of the film 3, tungsten 6 is selectively grown in the hole 5. Subsequently, second layer Al-Si wirings 7 are formed. An impurity 4 is implanted to the film 3 to selectively grow tungsten irrespective of the type of the film 3, thereby improving the reliability of multilayer interconnection. This is not limited to an embodiment, but various changes can be executed. For example, the type and quantity of the impurity ions to be implanted to the film may be suitable determined.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16448087A JPS648644A (en) | 1987-06-30 | 1987-06-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16448087A JPS648644A (en) | 1987-06-30 | 1987-06-30 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS648644A true JPS648644A (en) | 1989-01-12 |
Family
ID=15793974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16448087A Pending JPS648644A (en) | 1987-06-30 | 1987-06-30 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS648644A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6431440A (en) * | 1987-07-28 | 1989-02-01 | Seiko Instr & Electronics | Manufacture of semiconductor device |
US6348650B1 (en) | 1999-03-24 | 2002-02-19 | Ishizuka Electronics Corporation | Thermopile infrared sensor and process for producing the same |
-
1987
- 1987-06-30 JP JP16448087A patent/JPS648644A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6431440A (en) * | 1987-07-28 | 1989-02-01 | Seiko Instr & Electronics | Manufacture of semiconductor device |
US6348650B1 (en) | 1999-03-24 | 2002-02-19 | Ishizuka Electronics Corporation | Thermopile infrared sensor and process for producing the same |
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