JPS648669A - Manufactur of charge coupled element - Google Patents

Abstract

PURPOSE:To suppress a variation in the area between both an output barrier electrode and a reset electrode due to the displacement of a mask alignment and to easily suppress a variation in the area of a floating diffused region by manufacturing the barrier electrode and the reset electrode in the same step. CONSTITUTION:An isolation region 2 for electrically isolating between elements, and a gate oxide film 3 are formed on a semiconductor substrate 1. Then, with a mask a transfer electrode 4a is formed on the film 3. Thereafter, its positioning is conducted by a mask alignment, and a transfer electrode 4b, a reset electrode 5 and an output barrier electrode 6 are formed on the film 3. Subsequently, with all the electrodes formed on the film 3, i. e., the electrodes 4a, 4b, 5 and 6 in the drawings as masks an ion implantation is executed to form a floating diffused region 7, a reset drain region 8. Further, an insulating film 9 is deposited by glass coating or the like. Thus, since the electrodes 4, 6 are positioned with the same mask and manufactured by the same process, the mask alignment is not displaced.