JPS56153761A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56153761A
JPS56153761A JP5677180A JP5677180A JPS56153761A JP S56153761 A JPS56153761 A JP S56153761A JP 5677180 A JP5677180 A JP 5677180A JP 5677180 A JP5677180 A JP 5677180A JP S56153761 A JPS56153761 A JP S56153761A
Authority
JP
Japan
Prior art keywords
substrate
film
implanted
psg
high concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5677180A
Other languages
Japanese (ja)
Other versions
JPS6129151B2 (en
Inventor
Taiichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5677180A priority Critical patent/JPS56153761A/en
Publication of JPS56153761A publication Critical patent/JPS56153761A/en
Publication of JPS6129151B2 publication Critical patent/JPS6129151B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To achieve high integration by providing eave-shaped double layered masks on an insulating film on a substrate, implanting ions having different conductive types by the use of each mask, forming a junction capacitance in the substrate, and effectively utilizing the area of an MOS type memory cell. CONSTITUTION:On the P type Si substrate 101 on which a gate oxide film 103 is formed, an Si nitride film 104 and a PSG film 105 are sequentially deposited. Then, the PSG film 105 is over-etched by using a resistmask 106, B is implanted, and a P type high concentration region 108 is formed. Then the resist 106 is removed, phosphorus is implanted with the PSG 105 as mask so that the concentration of the phosphorus is higher than that of B, and N tye high concentration region 110 is provided. The difference in lateral positions of the implanted layers 108 and 110 is caused by the difference in sizes of the masks. But the coincidence of the layers 108 and 110 can be achieved by the control of the side etching amount 107 of the PSG film 105 and the heat treatment after the ion implantation. Thus, the junction capacitance comprising the high concentration impurity layers can be formed on a substrate by performing alignment with one mask pattern and the MOS memory by which junction is made to be the coupling capacitance can be highly integrated.
JP5677180A 1980-04-28 1980-04-28 Manufacture of semiconductor device Granted JPS56153761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5677180A JPS56153761A (en) 1980-04-28 1980-04-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5677180A JPS56153761A (en) 1980-04-28 1980-04-28 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56153761A true JPS56153761A (en) 1981-11-27
JPS6129151B2 JPS6129151B2 (en) 1986-07-04

Family

ID=13036734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5677180A Granted JPS56153761A (en) 1980-04-28 1980-04-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56153761A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184556A (en) * 1983-04-04 1984-10-19 Nec Corp Semiconductor integrated circuit
JPS62141757A (en) * 1985-12-16 1987-06-25 Mitsubishi Electric Corp Manufacture of semiconductor storage device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184556A (en) * 1983-04-04 1984-10-19 Nec Corp Semiconductor integrated circuit
JPS62141757A (en) * 1985-12-16 1987-06-25 Mitsubishi Electric Corp Manufacture of semiconductor storage device

Also Published As

Publication number Publication date
JPS6129151B2 (en) 1986-07-04

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