JPS6262472B2 - - Google Patents
Info
- Publication number
- JPS6262472B2 JPS6262472B2 JP56045138A JP4513881A JPS6262472B2 JP S6262472 B2 JPS6262472 B2 JP S6262472B2 JP 56045138 A JP56045138 A JP 56045138A JP 4513881 A JP4513881 A JP 4513881A JP S6262472 B2 JPS6262472 B2 JP S6262472B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon
- tantalum oxide
- tantalum
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 18
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 18
- 229910052715 tantalum Inorganic materials 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 230000001590 oxidative effect Effects 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 239000010955 niobium Substances 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 239000010410 layer Substances 0.000 description 84
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 42
- 229910001936 tantalum oxide Inorganic materials 0.000 description 41
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 25
- 235000012239 silicon dioxide Nutrition 0.000 description 15
- 239000000377 silicon dioxide Substances 0.000 description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000007784 solid electrolyte Substances 0.000 description 10
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- YADSGOSSYOOKMP-UHFFFAOYSA-N dioxolead Chemical compound O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- NQKXFODBPINZFK-UHFFFAOYSA-N dioxotantalum Chemical group O=[Ta]=O NQKXFODBPINZFK-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003481 tantalum Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
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奜é©ãªã³ã³ãã³ãµããã³ãã®è£œé æ¹æ³ã«é¢ãããDETAILED DESCRIPTION OF THE INVENTION The present invention relates to a capacitor suitable as a passive element in a semiconductor integrated circuit, etc., and a method for manufacturing the same.
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å容éãŸãã¯MOSæ§é ã®å®¹éãå©çšããããã
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ããŠããã Junction capacitance or MOS structure capacitance is used as a capacitor element in semiconductor integrated circuits.
The dielectric of the capacitor element in the latter MOS structure is
Currently, most of them are made of silicon dioxide (SiO 2 ).
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MOSãã€ãããã¯ã©ã³ãã ã¢ã¯ã»ã¹ã¡ã¢ãªãŒ
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ãã Silicon dioxide is a suitable material used for various purposes in current semiconductor integrated circuits.
MOS dynamic random access memory (hereinafter abbreviated as MOS RAM) will be explained. The structural unit of this MOS RAM is called a memory cell, and FIG. 1 shows an equivalent circuit of one element memory cell.
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äœïŒãšãã¯ãŒãç·ïŒãéžæãããŠMOSã³ã³ãã³
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ãç·ïŒã®é»äœã®å€åâ³ïŒ¶Dã¯æ¬¡åŒã§äžããããã In the memory cell shown in FIG. 1, MOS transistor 1 is a transfer transistor that turns on only when word line 2 is selected and transfers charges so that digit line 3 and the transistor side electrode of MOS capacitor 4 have the same potential. . Writing information to a memory cell involves selecting the word line 2 and accumulating charge in the MOS capacitor 4, which is set to the same potential as the digit line 3. Reading information is performed by selecting the word line 2 and storing charge in the MOS capacitor 4, which is set to the same potential as the digit line 3. This is the detection of the difference between the potential after the dummy cell is connected to the precharged digit line and the potential changed by the movement of charge between the word line 2 and the MOS capacitor 4 when the word line 2 is selected. A change in the potential of the digit line 3 when the word line 2 is selected, ÎV D , is given by the following equation.
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èŠãããã â³V D =C/C+ CD (V C -V D ) In the above formula, C... Capacity of MOS capacitor 4 C D ... Distributed capacitance of digit line 3 (5 in Figure 1) V C ... MOS capacitor Voltage V D across the digit line 3 is the voltage across the distributed capacitance C D of the digit line 3. From the above equation, in order to increase ÎV D , it is necessary to increase V C or increase the ratio of C to CD .
第ïŒå³ã¯æãäžè¬çãªãã®çš®ã®MOS RAMã®
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žåã·ãªã³ã³å±€ïŒãèªé»äœã§ããã FIG. 2 is a sectional view showing the structure of the most common type of MOS RAM. A polycrystalline silicon layer is formed on the substrate 6 with a silicon dioxide layer 9 interposed therebetween, with the n + region 7 provided on the P-type silicon substrate 6 and the inversion layer 8 formed on the surface of the substrate 6 functioning as a source or drain. The n + region 7 of the transfer transistor with gate 10 is connected to the n + regions of many other memory cells to form a digit line. The inversion layer 8 constitutes one electrode of the MOS capacitor, the polycrystalline silicon layer 11 is the opposite electrode, and the silicon dioxide layer 9 interposed therebetween is a dielectric.
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ãããšã«ãã容éå¯åºŠãå¢å ããããã®ã§ããã Since the digit line connects a large number of memory cells, the amount of wiring distribution is large, and in the current 64k-bit MOS RAM, C D /C is about 15 times as large. Even if a sufficient logic level charge corresponding to 1 is stored, the read signal is only about 100 mV. For this reason, the sense amplifier that detects and amplifies this read signal must be highly sensitive. In order to increase this read signal as much as possible, relax the operating conditions of the sense amplifier, and eliminate malfunctions due to noise voltage, it is necessary to provide the capacitor 4 of the memory cell with as large a capacitance as possible. It is. For this purpose, the planar arrangement of the memory cells is devised to maximize the area of the capacitor and to minimize the thickness of the silicon dioxide layer 9. One way to overcome the limitations of this method and further improve the degree of integration of memory cells is to change the point that the transfer transistor and capacitor are on the same plane and maximize the capacitor area by multilayering. Other methods use silicon nitride ( Si 3 N 4 ) (ε s =5 to 7), and by using tantalum oxide (ε s =20 to 28) as a dielectric material, the capacitance density is increased.
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ãããªã©ã®ç¹é·ãæããŠããã Tantalum (Ta), titanium (Ti), niobium (Nb), zirconium (Zr), tungsten (W), hafnium (Hf), vanadium (V) are
Along with aluminum (Al) and silicon (Si), it is known as a film-forming metal or valve metal. These metals, especially tantalum, can be processed to a technically selected thickness by anodization, thermal oxidation, etc., either as a single metal, or in the form of an alloy or a compound with nitrogen, etc. The formed oxide has superior chemical and physical stability compared to aluminum oxide, etc., and can withstand large electric field strengths and reduce leakage current as a dielectric material of capacitors. It has features such as low dielectric constant and high dielectric constant.
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ãã Capacitors using tantalum oxide (Ta 2 O 5 ) as a dielectric material, which are used in thin-film integrated circuits, contain manganese dioxide (MnO 2 ) or lead dioxide (PbO 2 ), etc., which are laminated in contact with the tantalum oxide layer. There are two types of capacitors: one has a solid electrolyte layer, and the other has no solid electrolyte layer.
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It is estimated to be around 400PF/mm 2 to 600PF/mm 2 .
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ã¯äžé©åœã§ããã Comparing the above two types of structures, tantalum oxide capacitors having a solid electrolyte layer are preferable from the standpoint of increasing capacity density, but manganese dioxide, which is commonly used as a solid electrolyte, decomposes at about 450°C, and oxygen Heating above this level is not allowed because it releases oxides and becomes a low-level oxide, which loses its intended function. The same applies to lead dioxide, and this structure is inappropriate as a capacitor element for a semiconductor integrated circuit.
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æããã Furthermore, in many examples of tantalum oxide capacitors for thin film integrated circuits, an unoxidized tantalum metal monomer or the like is left as one electrode. This structure is disadvantageous in controlling the thickness of the tantalum oxide layer when thermal oxidation is used, and although there are differences depending on the structure of the tantalum metal layer, oxygen in the tantalum oxide is trapped inside the unoxidized metal. Thermal diffusion phenomenon can occur at temperatures above about 200â, and when exposed to high temperatures in subsequent processes, tantalum silicide may be generated due to the interfacial reaction between metal tantalum and silicon, which may cause instability. have a problem.
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ãã Based on the above reasons, FIG. 3 shows an experimental example of a MOS RAM equipped with a tantalum oxide capacitor element that does not have a tantalum metal layer or a solid electrolyte layer. In this figure, a polycrystalline silicon layer 12, a tantalum oxide layer 13, and a polycrystalline silicon layer 14 form a capacitor element. A structure similar to this experimental example was developed by k. Ohta et al. in the ISSCC Dig.
Reported in Technical Papers (1980.p.66).
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ããããšåŸæ¥èªèãããŠããã This document indicates the use of an amorphous tantalum oxide film as a dielectric, but amorphous tantalum oxide crystallizes when placed at high temperatures, and the leakage current through the layer increases thereafter, making it difficult to use for memory devices. It was previously recognized that this significantly deteriorates the charge retention characteristics that are important for capacitors.
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After forming the tantalum oxide layer, manufacturing methods that have traditionally been considered optimal for semiconductor integrated circuits, such as not using the CDV method (chemical vapor deposition method) but relying on plasma CVD methods or sputtering methods that can be formed at low temperatures, are used. The manufacturing cost increases due to changing the manufacturing method to one that can be carried out at low temperatures in order to prevent the progression of corrosion, and the characteristics of the interlayer insulating layer itself, such as moisture resistance and level difference mitigation ability, are inferior to those formed at high temperatures. This has been considered a problem in increasing the capacitance density by using tantalum oxide as a dielectric material.
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ãåŸãããšãç®çãšããã In order to solve the above-mentioned problems, the present invention is designed to withstand high-temperature processing of approximately 1000°C in the manufacturing process of semiconductor devices including the same, and to be superior to similar capacitors for thin film integrated circuits in terms of capacitance density and leakage current. The purpose of the present invention is to obtain a capacitor element with high performance and a method for manufacturing the same.
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ã«æ¡æ£ããŠããããšãèŠåºããã In the process leading to the present invention, the inventor formed a tantalum layer with a thickness of about 20 nm on an n-type polycrystalline silicon layer by sputtering, and then completely oxidized the tantalum layer in dry oxygen at about 500°C. An amorphous tantalum oxide layer was obtained. After heating this to 800°C to 1000°C for 30 minutes each, we analyzed changes in the composition of the film in the depth direction using an ion microanalyzer, and found that silicon had diffused into the tantalum dioxide region.
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ãåŸãã The present inventor determined that it is possible to reduce leakage current by oxidizing the silicon that has moved to the grain boundaries due to this thermal diffusion and converting it into silicon dioxide, which is a good electrical insulating material, and has developed the present invention. I got it.
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çã¯åçã«å€§ããåªããèªé»äœãåŸãããã FIG. 5 is a diagram showing changes in the characteristics of the tantalum oxide layer, in which the horizontal axis represents the heat treatment temperature, and the vertical axis represents leakage current and dielectric constant. Crystallization of tantalum oxide partially begins at around 450â, but crystallization progresses above 600â, and
Thermal diffusion of silicon is active, causing a rapid increase in leakage current. Note that the dielectric constant increases as crystallization progresses. As mentioned above, the leakage current decreases rapidly at high temperatures exceeding 800â, and the results of heat treatment at 1000â show that
Excellent results of less than 5Ã10 -9 A/cm 2 were obtained at an electric field of 1 MV/cm. Also, the dielectric constant of silicon dioxide is much smaller than that of tantalum oxide, but since the area occupied by the crystal grain boundaries is small compared to the total area of the capacitor element, the dielectric constant as a capacitor element is It maintains a sufficient value of 20 or more. Thus, according to the present invention, an excellent dielectric material with far less leakage current and an equally large dielectric constant compared to conventional amorphous tantalum oxide was obtained.
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å¡«ãããã FIG. 7 is a sectional view showing a state following the previous figure.
First, a tantalum layer with a thickness of about 20 nm is formed on the polycrystalline silicon layer 25. This tantalum layer can be formed by electron beam heating vacuum evaporation, but even better results can be obtained by sputtering.
Next, the substrate is placed in a dry oxygen atmosphere at about 500° C. for about 30 minutes to completely oxidize the tantalum layer to obtain the tantalum oxide layer 26. In this oxidation process, tantalum changes into an oxide because it is easily oxidized, but the polycrystalline silicon forming the layer 25 below it is not noticeably oxidized unless it is at least 900°C or higher, so tantalum is not uniform. A tantalum oxide layer with good properties can be easily obtained. Subsequently, the substrate is placed in a dry oxygen atmosphere at about 1000° C. for about 30 minutes. Through this heat treatment, as described above, tantalum oxide is crystallized, and the silicon diffused from the polycrystalline silicon layer 25 to the crystal grain boundaries generated by the crystallization is oxidized, and the crystal grain boundaries are insulated with silicon dioxide as the main component. Filled with things.
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A polycrystalline silicon layer 27, which will become an upper electrode, is formed on the crystallized tantalum oxide layer 26. This polycrystalline silicon layer 27 can be formed without any concern by a silane thermal decomposition method at a reaction temperature of about 900°C. Subsequently, a pattern as a capacitor element is formed by photoetching. Next, an insulating layer 28 made of silicon dioxide or phosphosilicate glass (hereinafter referred to as PSG), and an aluminum wiring layer 29 serving as a digit line are formed to form a structure similar to that shown in FIG. 3. However, this embodiment differs in the structure of the insulating layer 28 when compared with the known example cited in FIG. has been created.
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åã«éæããŠããã That is, by carrying out the present invention, it has become possible to carry out a manufacturing method that requires a high temperature of about 1000°C, so that it is possible to carry out a manufacturing method that requires a high temperature of about 1000°C. PSG, which requires about 1000â for remelting for flow technology, and 900 to 1000â for densification.
This is due to the fact that it has become possible to utilize silicon dioxide produced by chemical vapor deposition, which requires temperatures at â. As a result, a reliable wiring layer can be formed even in a structure in which a large step difference occurs in the three-dimensional structure as in this embodiment. The capacitance density of the capacitor element in this example is approximately 5000PF/mm 2 , and the leakage current is approximately 2Ã10 -3 A/FV.
and has fully achieved its purpose.
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容éå¯åºŠã¯ãšãã«äœäžããã In the above embodiments, dry oxygen was used as the atmosphere during the heat treatment for crystallizing tantalum oxide and oxidizing silicon, but it is also effective to use humidified oxygen containing water vapor. Silicon oxidizes quickly in a humidified oxygen atmosphere, so compared to dry oxygen, the same result can be obtained by shortening the time or lowering the temperature, and if the temperature and time are the same, the leakage current,
Capacity density also decreases.
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æœäŸãšåçã®çµæãåŸãã Furthermore, crystallization of tantalum oxide and silicon diffusion into the tantalum oxide layer can be achieved by heat treatment in a non-oxidizing atmosphere such as nitrogen, or in an oxidizing atmosphere at a temperature at which oxidation of silicon does not proceed significantly. Even if the silicon is oxidized by the heat treatment in the oxidizing atmosphere after the above-mentioned oxidizing atmosphere, the same results as in the above embodiment can be obtained.
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ã§ããã In addition, we actively introduce silicon atoms into the tantalum oxide layer to prevent silicon atoms from segregating at grain boundaries with incomplete crystallinity, film defects, etc. during the crystallization process of tantalum oxide. This silicon atom may be oxidized using the silicon atom. Specifically, this method involves incorporating silicon into the metal tantalum when depositing it, or by oxidizing the tantalum and then introducing silicon atoms into the film by ion implantation or the like. can be carried out.
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ïŒMoïŒãéïŒAuïŒçã®éå±å±€ãšããŠãããã Next, in the above embodiment, the electrode material of the capacitor element was polycrystalline silicon, but the lower electrode was made of the single crystal silicon of the substrate or a layer of metal silicide such as molybdenum silicide (MoSi 2 ) instead of polycrystalline silicon. However, the same effect as in the above embodiment can be obtained, and the upper electrode may be made of a metal layer such as molybdenum (Mo) or gold (Au) in addition to the above-mentioned materials.
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ãããšãå¯èœã§ããã Furthermore, in the above embodiment, tantalum oxide was used as the dielectric material of the capacitor element, but oxides of titanium, niobium, zirconium, tungsten, hafnium, and vanadium also have properties similar to tantalum oxide, and are susceptible to crystallization of the oxide layer. Regarding leakage current, there is a phenomenon similar to that described above, and the present invention can be applied to this phenomenon.
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ãªãã In particular, titanium oxide (TiO 2 ) has a very high dielectric constant of about 100, but has a disadvantage of having a large leakage current, so the present invention is a very effective means.
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An oxide of the metal such as titanium is used as the dielectric of the capacitor element, and the metal oxide is crystallized in an oxidizing high-temperature atmosphere, and the crystal grain boundaries generated by the crystallization are diffused from the electrode in contact with the oxidation of silicon. The level of capacitors for thin-film integrated circuits that can withstand high-temperature processing of around 1000°C by being filled with material and can utilize manufacturing methods that are currently suitable for semiconductor integrated circuits, and that use the same type of metal oxide as a dielectric. The present invention provides a capacitor with a capacitance density exceeding that of the previous one, and a leakage current comparable to that of the previous capacitor, and a method for manufacturing the same. Although the present invention is intended for implementation in semiconductor integrated circuits, it can also be applied to thin film integrated circuits or individual circuit components.
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Figure 1 is an equivalent circuit diagram of a memory cell that is an example of a capacitor element, Figure 2 is a cross-sectional view showing the main parts of the structure of a conventional memory cell, and Figure 3 is an experimental example of a memory cell using conventional technology. FIG. 4 is a cross-sectional view showing the state of the dielectric layers in a, b, and c. FIG. 5 is a characteristic chart for explaining the effects of the present invention. and FIG. 8 are cross-sectional views showing one embodiment of the present invention. 1...MOS transistor, 2...word line,
3...digit wire, 4...MOS capacitor,
5... Distributed capacitance of digit line, 6... P-type silicon substrate, 7... n + region, 8... Inversion layer, 9...
... silicon dioxide layer, 10 ... polycrystalline silicon layer, 11 ... polycrystalline silicon layer, 12 ... polycrystalline silicon layer, 13 ... tantalum oxide layer, 14 ...
Polycrystalline silicon layer, 15... Insulating layer, 16... Polycrystalline silicon layer, 17... Tantalum oxide layer, 18
...Grain boundary, 19...Silicon dioxide, 20...
...P-type silicon substrate, 21...n + region, 22...
...n + region, 23...insulating layer, 24...gate,
25... Polycrystalline silicon layer, 26... Tantalum oxide layer, 27... Polycrystalline silicon layer, 28... Insulating layer, 29... Wiring layer.
Claims (1)
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ããã³ã³ãã³ãµã®è£œé æ¹æ³ã[Claims] 1. Oxidation of at least one metal among tantalum (Ta), titanium (Ti), niobium (Nb), zirconium (Zr), tungsten (W), hafnium (Hf), or vanadium (V). In a capacitor in which the dielectric layer is a film formed on a conductive substrate or layer serving as an electrode, the metal oxide is crystallized, and the metal oxide is formed at the grain boundaries of the dielectric layer. A capacitor characterized in that it is filled with a conductive substrate or layer, or a silicon oxide formed of silicon diffused from the metal oxide. 2 A film made of an oxide of at least one metal among tantalum (Ta), titanium (Ti), niobium (Nb), zirconium (Zr), tungsten (W), hafnium (Hf), or vanadium (V). , a method for manufacturing a capacitor comprising the step of forming a dielectric layer on a conductive substrate or layer serving as an electrode, crystallizing the metal oxide,
and a capacitor comprising the step of diffusing silicon into the metal oxide layer from the conductive substrate or layer serving as the electrode, and oxidizing the silicon diffused into the metal oxide layer to form silicon oxide. manufacturing method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56045138A JPS57167669A (en) | 1981-03-27 | 1981-03-27 | Capacitor and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56045138A JPS57167669A (en) | 1981-03-27 | 1981-03-27 | Capacitor and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57167669A JPS57167669A (en) | 1982-10-15 |
JPS6262472B2 true JPS6262472B2 (en) | 1987-12-26 |
Family
ID=12710915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56045138A Granted JPS57167669A (en) | 1981-03-27 | 1981-03-27 | Capacitor and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57167669A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60107854A (en) * | 1983-11-16 | 1985-06-13 | Hitachi Ltd | Capacitor |
JPH0656877B2 (en) * | 1987-09-10 | 1994-07-27 | ã·ã£ãŒãæ ªåŒäŒç€Ÿ | Method for producing tantalum oxide thin film |
JP2918835B2 (en) * | 1996-02-14 | 1999-07-12 | æ ªåŒäŒç€Ÿæ¥ç«è£œäœæ | Method for manufacturing semiconductor device |
US6777248B1 (en) * | 1997-11-10 | 2004-08-17 | Hitachi, Ltd. | Dielectric element and manufacturing method therefor |
KR100373159B1 (en) * | 1999-11-09 | 2003-02-25 | 죌ìíì¬ íìŽëì€ë°ë첎 | Method of manufacturing a capacitor in a semiconductor device |
US7531405B2 (en) | 2005-02-28 | 2009-05-12 | Qimonds Ag | Method of manufacturing a dielectric layer and corresponding semiconductor device |
-
1981
- 1981-03-27 JP JP56045138A patent/JPS57167669A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57167669A (en) | 1982-10-15 |
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