JPS6410647A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6410647A
JPS6410647A JP16631387A JP16631387A JPS6410647A JP S6410647 A JPS6410647 A JP S6410647A JP 16631387 A JP16631387 A JP 16631387A JP 16631387 A JP16631387 A JP 16631387A JP S6410647 A JPS6410647 A JP S6410647A
Authority
JP
Japan
Prior art keywords
film
metal silicide
polycrystal silicon
forming
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16631387A
Other languages
Japanese (ja)
Other versions
JPH0748494B2 (en
Inventor
Fujiki Tokuyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62166313A priority Critical patent/JPH0748494B2/en
Publication of JPS6410647A publication Critical patent/JPS6410647A/en
Publication of JPH0748494B2 publication Critical patent/JPH0748494B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To increase electric insulation characteristics, and improve step- difference in structure, by a method wherein the side-wall of a first polycrystal silicon film and a second polycrystal silicon film are oxidized in a process of thermal oxidation after forming a metal silicide pattern, by forming a second polycrystal silicon film on metal silicide. CONSTITUTION:After a photoresist film 6 on which a pattern is formed by plasma etching method is eliminated, a three-layer film composed of two polycrystal silicon layers 3, 5 and a metal silicide film 4 and, in particular, the surfaces of polycrystal silicon films 3, 5 are oxidized by thermal oxidizing method, and silicon oxide films 7, 8 are formed. Both ends of the metal silicide film 4 are apt to be pushed up, by a silicon oxide film 7 formed on both sides of the first polycrystal silicon film 3 under the metal silicide film 4. But the second polycrystal silicon film 5 exists also on the metal silicide film 4, and a silicon oxide film 8 whose both ends extend is formed by oxidizing, so that the metal silicide film 4 is prevented from forming protruding parts. Then, an insulator film 9 such as a PSG film and a BPSG film is formed by a vapor growth method.
JP62166313A 1987-07-02 1987-07-02 Method for manufacturing semiconductor device Expired - Lifetime JPH0748494B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62166313A JPH0748494B2 (en) 1987-07-02 1987-07-02 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62166313A JPH0748494B2 (en) 1987-07-02 1987-07-02 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6410647A true JPS6410647A (en) 1989-01-13
JPH0748494B2 JPH0748494B2 (en) 1995-05-24

Family

ID=15829031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62166313A Expired - Lifetime JPH0748494B2 (en) 1987-07-02 1987-07-02 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPH0748494B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6441245A (en) * 1987-08-06 1989-02-13 Mitsubishi Electric Corp Manufacture of semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7160800B2 (en) * 2005-01-07 2007-01-09 Taiwan Semiconductor Manufacturing Company, Ltd. Decreasing metal-silicide oxidation during wafer queue time

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62216345A (en) * 1986-03-18 1987-09-22 Fujitsu Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62216345A (en) * 1986-03-18 1987-09-22 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6441245A (en) * 1987-08-06 1989-02-13 Mitsubishi Electric Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPH0748494B2 (en) 1995-05-24

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