JPS6410647A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6410647A JPS6410647A JP16631387A JP16631387A JPS6410647A JP S6410647 A JPS6410647 A JP S6410647A JP 16631387 A JP16631387 A JP 16631387A JP 16631387 A JP16631387 A JP 16631387A JP S6410647 A JPS6410647 A JP S6410647A
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal silicide
- polycrystal silicon
- forming
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To increase electric insulation characteristics, and improve step- difference in structure, by a method wherein the side-wall of a first polycrystal silicon film and a second polycrystal silicon film are oxidized in a process of thermal oxidation after forming a metal silicide pattern, by forming a second polycrystal silicon film on metal silicide. CONSTITUTION:After a photoresist film 6 on which a pattern is formed by plasma etching method is eliminated, a three-layer film composed of two polycrystal silicon layers 3, 5 and a metal silicide film 4 and, in particular, the surfaces of polycrystal silicon films 3, 5 are oxidized by thermal oxidizing method, and silicon oxide films 7, 8 are formed. Both ends of the metal silicide film 4 are apt to be pushed up, by a silicon oxide film 7 formed on both sides of the first polycrystal silicon film 3 under the metal silicide film 4. But the second polycrystal silicon film 5 exists also on the metal silicide film 4, and a silicon oxide film 8 whose both ends extend is formed by oxidizing, so that the metal silicide film 4 is prevented from forming protruding parts. Then, an insulator film 9 such as a PSG film and a BPSG film is formed by a vapor growth method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62166313A JPH0748494B2 (en) | 1987-07-02 | 1987-07-02 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62166313A JPH0748494B2 (en) | 1987-07-02 | 1987-07-02 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6410647A true JPS6410647A (en) | 1989-01-13 |
JPH0748494B2 JPH0748494B2 (en) | 1995-05-24 |
Family
ID=15829031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62166313A Expired - Lifetime JPH0748494B2 (en) | 1987-07-02 | 1987-07-02 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0748494B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6441245A (en) * | 1987-08-06 | 1989-02-13 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7160800B2 (en) * | 2005-01-07 | 2007-01-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Decreasing metal-silicide oxidation during wafer queue time |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62216345A (en) * | 1986-03-18 | 1987-09-22 | Fujitsu Ltd | Semiconductor device |
-
1987
- 1987-07-02 JP JP62166313A patent/JPH0748494B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62216345A (en) * | 1986-03-18 | 1987-09-22 | Fujitsu Ltd | Semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6441245A (en) * | 1987-08-06 | 1989-02-13 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH0748494B2 (en) | 1995-05-24 |
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