JPS5562760A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5562760A JPS5562760A JP10576478A JP10576478A JPS5562760A JP S5562760 A JPS5562760 A JP S5562760A JP 10576478 A JP10576478 A JP 10576478A JP 10576478 A JP10576478 A JP 10576478A JP S5562760 A JPS5562760 A JP S5562760A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- sio
- capacitor
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To provide various functions of a semiconductor device by forming the same conductivity semiconductor as a channel under the gate electrode of an IGFET as one electrode of a capacitor to thereby simultaneously form a capacitor thereat.
CONSTITUTION: A field oxide film 2 is fabricated in a P-type silicon, and coated with an N+-type polysilicon 3 thereon. An opening is perforated on the layer 3, layers 4, 5 are coated thereon, and a SiO2 layer 6, Si3N4 layer 7, SiO2 layer 8, P+- type polysilicon layer 9 and Mo layer 10 are sequentially laminated thereon. Then, it is photoetched to form N+-layers 13, 14 by diffusing phosphorus (P) on the exposed portions 11, 12 of the substrate. Then, it is coated by a SiO2 layer 16, an opening is selectively perforated to thereby form an aluminum lead 18 therefrom. In this configuration, a dielectric portion forming a capacitor 19 has the same thickness as the gate insulator, the electrode is made of the same material as the substrate to be chemically stable and to make close contact with molybdenum (Mo) with the electrode leads to thereby improve its conductivity. Accordingly, even if the dielectric film is reduced in its thickness to increase its capacity, its characteristics are not deteriorated.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10576478A JPS5562760A (en) | 1978-08-30 | 1978-08-30 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10576478A JPS5562760A (en) | 1978-08-30 | 1978-08-30 | Semiconductor device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3062571A Division JPS5624385B1 (en) | 1971-05-07 | 1971-05-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5562760A true JPS5562760A (en) | 1980-05-12 |
Family
ID=14416252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10576478A Pending JPS5562760A (en) | 1978-08-30 | 1978-08-30 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5562760A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58197761A (en) * | 1982-05-13 | 1983-11-17 | Mitsubishi Electric Corp | Semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
-
1978
- 1978-08-30 JP JP10576478A patent/JPS5562760A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58197761A (en) * | 1982-05-13 | 1983-11-17 | Mitsubishi Electric Corp | Semiconductor device |
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