JPS5562760A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5562760A
JPS5562760A JP10576478A JP10576478A JPS5562760A JP S5562760 A JPS5562760 A JP S5562760A JP 10576478 A JP10576478 A JP 10576478A JP 10576478 A JP10576478 A JP 10576478A JP S5562760 A JPS5562760 A JP S5562760A
Authority
JP
Japan
Prior art keywords
layer
electrode
sio
capacitor
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10576478A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP10576478A priority Critical patent/JPS5562760A/en
Publication of JPS5562760A publication Critical patent/JPS5562760A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To provide various functions of a semiconductor device by forming the same conductivity semiconductor as a channel under the gate electrode of an IGFET as one electrode of a capacitor to thereby simultaneously form a capacitor thereat.
CONSTITUTION: A field oxide film 2 is fabricated in a P-type silicon, and coated with an N+-type polysilicon 3 thereon. An opening is perforated on the layer 3, layers 4, 5 are coated thereon, and a SiO2 layer 6, Si3N4 layer 7, SiO2 layer 8, P+- type polysilicon layer 9 and Mo layer 10 are sequentially laminated thereon. Then, it is photoetched to form N+-layers 13, 14 by diffusing phosphorus (P) on the exposed portions 11, 12 of the substrate. Then, it is coated by a SiO2 layer 16, an opening is selectively perforated to thereby form an aluminum lead 18 therefrom. In this configuration, a dielectric portion forming a capacitor 19 has the same thickness as the gate insulator, the electrode is made of the same material as the substrate to be chemically stable and to make close contact with molybdenum (Mo) with the electrode leads to thereby improve its conductivity. Accordingly, even if the dielectric film is reduced in its thickness to increase its capacity, its characteristics are not deteriorated.
COPYRIGHT: (C)1980,JPO&Japio
JP10576478A 1978-08-30 1978-08-30 Semiconductor device Pending JPS5562760A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10576478A JPS5562760A (en) 1978-08-30 1978-08-30 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10576478A JPS5562760A (en) 1978-08-30 1978-08-30 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP3062571A Division JPS5624385B1 (en) 1971-05-07 1971-05-07

Publications (1)

Publication Number Publication Date
JPS5562760A true JPS5562760A (en) 1980-05-12

Family

ID=14416252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10576478A Pending JPS5562760A (en) 1978-08-30 1978-08-30 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5562760A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197761A (en) * 1982-05-13 1983-11-17 Mitsubishi Electric Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197761A (en) * 1982-05-13 1983-11-17 Mitsubishi Electric Corp Semiconductor device

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