JPS5493978A - Semicoductor device - Google Patents

Semicoductor device

Info

Publication number
JPS5493978A
JPS5493978A JP75278A JP75278A JPS5493978A JP S5493978 A JPS5493978 A JP S5493978A JP 75278 A JP75278 A JP 75278A JP 75278 A JP75278 A JP 75278A JP S5493978 A JPS5493978 A JP S5493978A
Authority
JP
Japan
Prior art keywords
type
impurity density
vapour
guard ring
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP75278A
Other languages
Japanese (ja)
Inventor
Ideo Maeyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP75278A priority Critical patent/JPS5493978A/en
Publication of JPS5493978A publication Critical patent/JPS5493978A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

Abstract

PURPOSE:To obtain a sufficient depletion layer and enhance dielectric strength by providing two vapour-phase layers different from a guard ring in impurity density in a semiconductor device which has the guard ring to obtain a high dielectric strength. CONSTITUTION:The same conductive-type and low-impurity density N<->-type layer 2 is formed on N<++>-type substrate 1, which has a high impurity density, by vapour- phase growing, and further, in the same vapour-phase growing system, N<-->-type layer 9 which has an impurity density lower than N<->-type layer 2 is formed. Next, insulating protect film 5 such as SiO2 is formed, and the part where a guard ring should be formed is removed to form ring P<++>-type region 3. Next, insulating protect film 5 is formed, and an electrode leading-out window is formed on P<++>-type region 3, and after that, aluminum is evaporated to form electrode 6.
JP75278A 1978-01-06 1978-01-06 Semicoductor device Pending JPS5493978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP75278A JPS5493978A (en) 1978-01-06 1978-01-06 Semicoductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP75278A JPS5493978A (en) 1978-01-06 1978-01-06 Semicoductor device

Publications (1)

Publication Number Publication Date
JPS5493978A true JPS5493978A (en) 1979-07-25

Family

ID=11482418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP75278A Pending JPS5493978A (en) 1978-01-06 1978-01-06 Semicoductor device

Country Status (1)

Country Link
JP (1) JPS5493978A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5834963A (en) * 1981-08-26 1983-03-01 Nec Corp Semiconductor device
JP2006147953A (en) * 2004-11-22 2006-06-08 Matsushita Electric Ind Co Ltd Chip semiconductor device and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5834963A (en) * 1981-08-26 1983-03-01 Nec Corp Semiconductor device
JP2006147953A (en) * 2004-11-22 2006-06-08 Matsushita Electric Ind Co Ltd Chip semiconductor device and its manufacturing method

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