JPS5493966A - Production of 3-5 group compound semiconductor device - Google Patents

Production of 3-5 group compound semiconductor device

Info

Publication number
JPS5493966A
JPS5493966A JP38278A JP38278A JPS5493966A JP S5493966 A JPS5493966 A JP S5493966A JP 38278 A JP38278 A JP 38278A JP 38278 A JP38278 A JP 38278A JP S5493966 A JPS5493966 A JP S5493966A
Authority
JP
Japan
Prior art keywords
layer
compound semiconductor
group compound
insulator
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP38278A
Other languages
Japanese (ja)
Inventor
Kiyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP38278A priority Critical patent/JPS5493966A/en
Publication of JPS5493966A publication Critical patent/JPS5493966A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To separate and form an objective region with a high precision in planar structure by converting a part of a semiconductor layer to an insulator by anode oxidation or plasma anode oxidation in the production of a III-V group compound semiconductor device.
CONSTITUTION: The first III-V group compound semiconductor layer 32 and the second III-V group compound semiconductor layer 33 are formed on semi-insulating substrate 31. Next, the surface of layer 33 is covered with resistor 34 selectively, and layer 33 is converted to insulator 35 through a window of resistor 34 by anode oxidation or plasma anode oxidation so that insulator 34 may reach layer 32. Next, after removing resistor 34, electrodes 38, 36 and 37 are formed on insulator 35, layer 33a and layer 33b as required.
COPYRIGHT: (C)1979,JPO&Japio
JP38278A 1978-01-07 1978-01-07 Production of 3-5 group compound semiconductor device Pending JPS5493966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP38278A JPS5493966A (en) 1978-01-07 1978-01-07 Production of 3-5 group compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP38278A JPS5493966A (en) 1978-01-07 1978-01-07 Production of 3-5 group compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS5493966A true JPS5493966A (en) 1979-07-25

Family

ID=11472240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP38278A Pending JPS5493966A (en) 1978-01-07 1978-01-07 Production of 3-5 group compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5493966A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103358A (en) * 1980-12-18 1982-06-26 Matsushita Electric Ind Co Ltd Manufacture of amorphous silicon mosfet

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5097284A (en) * 1973-12-25 1975-08-02
JPS5160484A (en) * 1974-11-22 1976-05-26 Mitsubishi Electric Corp Handotaisochino seizohoho

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5097284A (en) * 1973-12-25 1975-08-02
JPS5160484A (en) * 1974-11-22 1976-05-26 Mitsubishi Electric Corp Handotaisochino seizohoho

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103358A (en) * 1980-12-18 1982-06-26 Matsushita Electric Ind Co Ltd Manufacture of amorphous silicon mosfet

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