JPS5493966A - Production of 3-5 group compound semiconductor device - Google Patents
Production of 3-5 group compound semiconductor deviceInfo
- Publication number
- JPS5493966A JPS5493966A JP38278A JP38278A JPS5493966A JP S5493966 A JPS5493966 A JP S5493966A JP 38278 A JP38278 A JP 38278A JP 38278 A JP38278 A JP 38278A JP S5493966 A JPS5493966 A JP S5493966A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- compound semiconductor
- group compound
- insulator
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To separate and form an objective region with a high precision in planar structure by converting a part of a semiconductor layer to an insulator by anode oxidation or plasma anode oxidation in the production of a III-V group compound semiconductor device.
CONSTITUTION: The first III-V group compound semiconductor layer 32 and the second III-V group compound semiconductor layer 33 are formed on semi-insulating substrate 31. Next, the surface of layer 33 is covered with resistor 34 selectively, and layer 33 is converted to insulator 35 through a window of resistor 34 by anode oxidation or plasma anode oxidation so that insulator 34 may reach layer 32. Next, after removing resistor 34, electrodes 38, 36 and 37 are formed on insulator 35, layer 33a and layer 33b as required.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP38278A JPS5493966A (en) | 1978-01-07 | 1978-01-07 | Production of 3-5 group compound semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP38278A JPS5493966A (en) | 1978-01-07 | 1978-01-07 | Production of 3-5 group compound semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5493966A true JPS5493966A (en) | 1979-07-25 |
Family
ID=11472240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP38278A Pending JPS5493966A (en) | 1978-01-07 | 1978-01-07 | Production of 3-5 group compound semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5493966A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57103358A (en) * | 1980-12-18 | 1982-06-26 | Matsushita Electric Ind Co Ltd | Manufacture of amorphous silicon mosfet |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5097284A (en) * | 1973-12-25 | 1975-08-02 | ||
JPS5160484A (en) * | 1974-11-22 | 1976-05-26 | Mitsubishi Electric Corp | Handotaisochino seizohoho |
-
1978
- 1978-01-07 JP JP38278A patent/JPS5493966A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5097284A (en) * | 1973-12-25 | 1975-08-02 | ||
JPS5160484A (en) * | 1974-11-22 | 1976-05-26 | Mitsubishi Electric Corp | Handotaisochino seizohoho |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57103358A (en) * | 1980-12-18 | 1982-06-26 | Matsushita Electric Ind Co Ltd | Manufacture of amorphous silicon mosfet |
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